Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon

Valentin, Audrey; Raine, M.; Sauvestre, J. E.; Gaillardin, M.; Paillet, Philippe

doi:10.1016/j.nimb.2012.07.028

Cited by 51 publications

(90 citation statements)

References 47 publications

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“…Geant4 and its low energy and small scale extensions -such as the Geant4-DNA physical, physico-chemical and chemical processes for liquid water [33,34] or the ''MicroElec'' processes for silicon [35][36][37] -may provide a framework for the mechanistic simulation of involved fundamental processes. The Geant4 simulated spectra have been superimposed to the measured spectrum.…”

Section: Discussionmentioning

confidence: 99%

Comparison of experimental proton-induced fluorescence spectra for a selection of thin high-Z samples with Geant4 Monte Carlo simulations

Incerti

Barberet

Devès

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Discussionmentioning

confidence: 99%

Comparison of experimental proton-induced fluorescence spectra for a selection of thin high-Z samples with Geant4 Monte Carlo simulations

Incerti

Barberet

Devès

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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“…There have been a number of programs developed to simulate SEE (Ding and Shimizu, ; Dapor, ; Villarrubia et al ., ; Kieft and Bosch, ; Valentin et al ., ). SEM images have also been simulated (Li and Ding, ; Kieft and Bosch, ; Li et al ., ), although this is computationally intensive and parallel computation is preferred (Li et al ., ).…”

Section: Simulation Of Secondary Electronsmentioning

confidence: 97%

Simulations and measurements in scanning electron microscopes at low electron energy

2016

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Summary: The advent of new imaging technologies in Scanning Electron Microscopy (SEM) using low energy (0-2 keV) electrons has brought about new ways to study materials at the nanoscale. It also brings new challenges in terms of understanding electron transport at these energies. In addition, reduction in energy has brought new contrast mechanisms producing images that are sometimes difficult to interpret. This is increasing the push for simulation tools, in particular for low impact energies of electrons. The use of Monte Carlo calculations to simulate the transport of electrons in materials has been undertaken by many authors for several decades. However, inaccuracies associated with the Monte Carlo technique start to grow as the energy is reduced. This is not simply associated with inaccuracies in the knowledge of the scattering cross-sections, but is fundamental to the Monte Carlo technique itself. This is because effects due to the wave nature of the electron and the energy band structure of the target above the vacuum energy level become important and these are properties which are difficult to handle using the Monte Carlo method. In this review we briefly describe the new techniques of scanning low energy electron microscopy and then outline the problems and challenges of trying to understand and quantify the signals that are obtained. The effects of charging and spin polarised measurement are also briefly explored. SCANNING 9999:1-17, 2016.

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“…calculations in Geant4 [19]. However, energy deposition distributions obtained from the method used in this work are compared to Akkerman's published results.…”

Section: Accuracy Of Mred In Thin Volumesmentioning

confidence: 95%

Limitations of LET in Predicting the Radiation Response of Advanced Devices

Funkhouser

Weller

Reed

et al. 2015

IEEE Trans. Nucl. Sci.

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The impact of high-Z metals on energy deposition in thin volumes due to direct ionization by ions in space environments is examined. The importance of energy loss straggling in small volumes typical of those found in advanced devices is also evaluated. It is found that direct ionization by protons over a large energy range may contribute significantly to error rates in advanced silicon on insulator devices due to energy loss straggling. This improves on conventional event rate analysis based on linear energy transfer, which does not describe the contributions of direct ionization by protons to the error rate.

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Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon

Cited by 51 publications

References 47 publications

Comparison of experimental proton-induced fluorescence spectra for a selection of thin high-Z samples with Geant4 Monte Carlo simulations

Comparison of experimental proton-induced fluorescence spectra for a selection of thin high-Z samples with Geant4 Monte Carlo simulations

Simulations and measurements in scanning electron microscopes at low electron energy

Limitations of LET in Predicting the Radiation Response of Advanced Devices

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