Impact of the interface layer on the cycling behaviour and retention of ferroelectric hafnium oxide

Lederer, Maximilian; Mertens, Konstantin; Kia, Alireza M.; Emara, Jennifer; Olivo, Ricardo; Raffel, Yannick; Lehninger, David; Ali, Tarek; Kühnel, Kati; Seidel, Konrad; Kämpfe, Thomas; Eng, Lukas M.

doi:10.1557/s43580-021-00102-4

Cited by 6 publications

(14 citation statements)

References 12 publications

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“…As shown recently [38], the annealing temperature strongly influences the electrical behavior. While low annealing temperatures, e.g.…”

Section: Resultsmentioning

confidence: 67%

“…1c) have revealed that even for the ferroelectric-like wakeup, as observed in Fig. 1b, purely ferroelectric behavior is not present initially [38]. This is indicated by the peak splitting in the extracted Preisach density.…”

Section: Resultsmentioning

confidence: 80%

“…However, different annealing conditions affected the crystallographic texture as well and its impact on the electrical behavior is not fully understood [5]. Nevertheless, recent measurements were able to relate the change in the degree of AFE-like behavior to the interface thickness [38]. Such behavior cannot easily be explained by domain pinning and internal bias fields, as the chemical composition of the hafnium oxide layer and the interfaces did not change, or increased tetragonal phase, since it is not expected for thicker interface layers.…”

Section: Resultsmentioning

confidence: 99%

“…While this explains most of the observed behavior, it raises the question for origin of the shift to higher Si-concentrations in case of the MFIS samples. Recent studies have investigated the impact of the interface layer on the behavior of HSO [5,37,38]. Comparing the hysteresis of the samples with different interface layer thickness, a clear trend to ferroelectric behavior with increasing thickness is observed (see Fig.…”

Section: Invited Papermentioning

confidence: 99%

“…Upon electric field-cycling, the observed Preisach density transits to 180°-domain wall movement (no peak splitting) and therefore ferroelectric switching. In consequence, the presence of 90°-domain walls, that are able to explain the observed behavior [38], has to be considered for the here investigated samples, which were annealed at 1050 °C, resembling FEoL conditions.…”

Section: Invited Papermentioning

confidence: 99%

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Substrate-dependent differences in ferroelectric behavior and phase diagram of Si-doped hafnium oxide

Lederer

Mertens

Olivo

et al. 2021

Journal of Materials Research

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Non-volatile memories based on ferroelectric hafnium oxide, especially the ferroelectric field-effect transistor (FeFET), have outstanding properties, e.g. for the application in neuromorphic circuits. However, material development has focused so far mainly on metal–ferroelectric–metal (MFM) capacitors, while FeFETs are based on metal–ferroelectric–insulator–semiconductor (MFIS) capacitors. Here, the influence of the interface properties, annealing temperature and Si-doping content are investigated. Antiferroelectric-like behavior is strongly suppressed with a thicker interface layer and high annealing temperature. In addition, high-k interface dielectrics allow for thicker interface layers without retention penalty. Moreover, the process window for ferroelectric behavior is much larger in MFIS capacitors compared to MFM-based films. This does not only highlight the substrate dependence of ferroelectric hafnium oxide films, but also gives evidence that the phase diagram of ferroelectric hafnium oxide is defined by the mechanical stress. Graphic Abstract

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“…As shown recently [38], the annealing temperature strongly influences the electrical behavior. While low annealing temperatures, e.g.…”

Section: Resultsmentioning

confidence: 67%

Section: Resultsmentioning

confidence: 80%

Section: Resultsmentioning

confidence: 99%

Section: Invited Papermentioning

confidence: 99%

Section: Invited Papermentioning

confidence: 99%

See 3 more Smart Citations

Substrate-dependent differences in ferroelectric behavior and phase diagram of Si-doped hafnium oxide

Lederer

Mertens

Olivo

et al. 2021

Journal of Materials Research

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Ferroelectric Transistors for Memory and Neuromorphic Device Applications

Kim

Lee

2023

Advanced Materials

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Because a non-centrosymmetric crystal structure is mandatory for ferroelectric properties, very few materials are classified as ferroelectric. Historically, materials with complex crystal structures, such as BaTiO 3 (BTO), Pb[Zr x Ti 1−x ]O 3 (PZT), and Sr 2 Bi 2 TaO 9 (SBT), have been found to exhibit ferroelectricity. [5][6][7][8][9] Due to their spontaneous polarization, ferroelectric materials are diversely applied in memory devices, actuators, sensors, and energy storage. [1,2,[10][11][12][13] As the polarization state of ferroelectric materials can be regulated by an external electric field and the polarization is retained after the removal of the external electric field, such materials have the potential for applications involving high-performance non volatile memories. [9,14] However, some issues of conventional ferroelectric materials, such as high annealing temperatures, the requirement of noble electrode materials, and the diffusion of elements such as Pb complicate the integration of the previously reported ferroelectric materials into complementary metal-oxide semiconductors (CMOSs). [15][16][17][18] Furthermore, the large dielectric constants of perovskite-based ferroelectrics lead to high depolarization fields; [9,16] thus, the materials have short retention time and exhibit unstable polarization. [9] Additionally, the limited thickness scalability, complex etching process, and fatigue behaviors of perovskite-based ferroelectrics hinder the development of highly scaled ferroelectric devices. [9,18] Thus, semiconductor devices based on ferroelectric materials have limited commercial applications. Since the development of hafnia-based ferroelectrics, ferroelectric hafnia has attracted immense attention toward the development of semiconductor devices. [19][20][21] Compared to perovskite-based ferroelectric materials, hafnia-based ferroelectrics exhibit high scalability, and have high coercive electric fields (E c ) and low dielectric permittivity values, making them suitable for the fabrication of high-performance memory devices. [2,16,20,22] Additionally, hafnia is compatible with Si-based CMOS processes. Due to these advantages, hafnia-based ferroelectrics have been used in next-generation memory devices (such as ferroelectric capacitors, transistors, and tunnel junctions [FTJs]). [22][23][24][25][26] This paper reviews the recent findings and applications of hafnia-based ferroelectrics, highlighting the recent advances in ferroelectric transistors for next-generation memory and neuromorphic Ferroelectric materials have been intensively investigated for highperformance nonvolatile memory devices in the past decades, owing to their nonvolatile polarization characteristics. Ferroelectric memory devices are expected to exhibit lower power consumption and higher speed than conventional memory devices. However, non-complementary metal-oxidesemiconductor (CMOS) compatibility and degradation due to fatigue of traditional perovskite-based ferroelectric materials have hindered the development of high-density...

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Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics

Kim,

Kuk,

Kim

et al. 2023

Adv Elect Materials

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The study demonstrates HfZrOx (HZO)‐based Si ferroelectric field‐effect transistors (FeFETs) with a low operating voltage (1.5 V) and immediate read‐after‐write operation (100 ns) via HZO thickness scaling, electron‐beam‐irradiation (EBI) treatment, and interfacial layer (IL) scavenging. With these three strategies, reduced operating voltage, immediate read‐after‐write capability, and improved endurance (>108 cycles) and retention (extrapolated 10‐year) characteristics are achieved in FeFETs. The improved characteristics of FeFETs are attributed to the reduced operating voltage by HZO thickness scaling, the ferroelectric orthorhombic phase‐oriented crystallization by EBI treatment, and the reduced gate voltage drop across the IL and reduced depolarization field by the IL scavenging. It is believed that this work contributes to the development of low‐power and fast‐read FeFETs.

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Impact of the interface layer on the cycling behaviour and retention of ferroelectric hafnium oxide

Cited by 6 publications

References 12 publications

Substrate-dependent differences in ferroelectric behavior and phase diagram of Si-doped hafnium oxide

Substrate-dependent differences in ferroelectric behavior and phase diagram of Si-doped hafnium oxide

Ferroelectric Transistors for Memory and Neuromorphic Device Applications

Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics

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