Impact of the Activation of Carbon Vacancies at High Temperatures on the Minority Carrier Lifetimes in the Intrinsic Area of 4H-SiC PiN Rectifier

Lechner, Benedikt; Huang, Yaren; Wachutka, G.

doi:10.1109/asdam.2018.8544472

Cited by 2 publications

(4 citation statements)

References 4 publications

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“…Additionally, the carrier mobility in the MOS and drift region is reduced at extremely high temperatures. Furthermore, as presented in [17], the carrier lifetime exhibits a negative temperature coefficient at temperatures higher than 673K due to the activation of a higher number of recombination centres.…”

Section: A Parasitic Thyristor Latching During Steady-statementioning

confidence: 94%

“…The thicknesses are 4, 3 and 100 μm, respectively. The doping profile of the p well is retrograde, featuring a lower surface doping of 5x10 17 and a maximum doping concentration of 1.8×10 18 𝑐𝑚 -3 at a depth of 0.5 μm, which gradually reduces to 3×10 14 𝑐𝑚 -3 at a depth of 2 μm as shown in Fig. 1(c).…”

Section: Device Structure Modeling and Simulationmentioning

confidence: 95%

“…Sentaurus TCAD simulation platform was used to implement the 4H-SiC IGBT structure shown in Fig 1(a). The doping concentration of the p+ injector, n buffer layer and n-drift layer are 1×10 19 , 5×10 17 and 3×10 14 𝑐𝑚 -3 , respectively. The thicknesses are 4, 3 and 100 μm, respectively.…”

Section: Device Structure Modeling and Simulationmentioning

confidence: 99%

See 2 more Smart Citations

Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT

Almpanis

Evans

Antoniou

et al. 2022

2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

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This paper presents a comprehensive shortcircuit robustness investigation of 4H-Silicon Carbide (SiC) ntype Insulated Gate Bipolar Transistors (nIGBTs) for Medium-Voltage and High-Voltage applications. Numerical electrothermal TCAD simulations evaluate the IGBT shortcircuit behaviour under various conditions and device parameters variation. The internal device current density and temperature distribution show that the parasitic thyristor latchup and the thermally-assisted leakage current generation can be the failure mechanism of SiC nIGBT when the device temperature in the p-well/n-emitter interface region is about 1500K.

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Section: A Parasitic Thyristor Latching During Steady-statementioning

confidence: 94%

Section: Device Structure Modeling and Simulationmentioning

confidence: 95%

See 1 more Smart Citation

Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT

Almpanis

Evans

Antoniou

et al. 2022

2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

View full text Add to dashboard Cite

show abstract

“…The decisive parameter (power factor) for the temperaturedependence of the carrier lifetime is set to be 1.72. As it is reported in [12], it still needs to be calibrated with reference to recent experimental findings. In addition, the physical models describing the temperaturedependence of heat capacity and thermal conductivity have been adjusted to fit the experimental data up to 3000K [7], close to the melting point.…”

Section: Electrothermal Simulationsmentioning

confidence: 99%

Comparative Numerical Analysis of the Robustness of Si and SiC PiN Diodes Against Cosmic Radiation-Induced Failure

Huang

Lechner

Wachutka

2020

MSF

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This work aims at extending the predictive simulation technique for cosmic ray-induced failure analysis from Si PiN diodes [1] to SiC PiN diodes. Accurate 3D cylindrical-symmetric transient simulations were performed with a minimum mesh size of 20nm at the center track of the impinging ion and a maximum time step of 0.1ps during the development of the ion-induced transient current. We made a comparative study between a SiC PiN diode and a Si PiN diode with the same blocking voltage of 1.5kV, using the same heavy ion transportation models. In the simulation, we observed different ion-induced current transients, differing not only in the peak value of the current, but also in its duration. Due to different physical mechanisms, the dependence of the ion-induced current on the reverse pre-bias voltage and the numerical mesh adaptations are also different. Eventually, we brieflydiscuss electro-thermal simulations, which indicate once more that the ion-induced transient current in the SiC PiN diodes under consideration is primarily drift current and involves only negligible impact ionization.

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Impact of the Activation of Carbon Vacancies at High Temperatures on the Minority Carrier Lifetimes in the Intrinsic Area of 4H-SiC PiN Rectifier

Cited by 2 publications

References 4 publications

Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT

Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT

Comparative Numerical Analysis of the Robustness of Si and SiC PiN Diodes Against Cosmic Radiation-Induced Failure

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