2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) 2018
DOI: 10.1109/asdam.2018.8544472
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Impact of the Activation of Carbon Vacancies at High Temperatures on the Minority Carrier Lifetimes in the Intrinsic Area of 4H-SiC PiN Rectifier

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Cited by 2 publications
(4 citation statements)
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“…Additionally, the carrier mobility in the MOS and drift region is reduced at extremely high temperatures. Furthermore, as presented in [17], the carrier lifetime exhibits a negative temperature coefficient at temperatures higher than 673K due to the activation of a higher number of recombination centres.…”
Section: A Parasitic Thyristor Latching During Steady-statementioning
confidence: 94%
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“…Additionally, the carrier mobility in the MOS and drift region is reduced at extremely high temperatures. Furthermore, as presented in [17], the carrier lifetime exhibits a negative temperature coefficient at temperatures higher than 673K due to the activation of a higher number of recombination centres.…”
Section: A Parasitic Thyristor Latching During Steady-statementioning
confidence: 94%
“…The thicknesses are 4, 3 and 100 ฮผm, respectively. The doping profile of the p well is retrograde, featuring a lower surface doping of 5x10 17 and a maximum doping concentration of 1.8ร—10 18 ๐‘๐‘š -3 at a depth of 0.5 ฮผm, which gradually reduces to 3ร—10 14 ๐‘๐‘š -3 at a depth of 2 ฮผm as shown in Fig. 1(c).…”
Section: Device Structure Modeling and Simulationmentioning
confidence: 95%
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“…The decisive parameter (power factor) for the temperaturedependence of the carrier lifetime is set to be 1.72. As it is reported in [12], it still needs to be calibrated with reference to recent experimental findings. In addition, the physical models describing the temperaturedependence of heat capacity and thermal conductivity have been adjusted to fit the experimental data up to 3000K [7], close to the melting point.…”
Section: Electrothermal Simulationsmentioning
confidence: 99%