2020
DOI: 10.4028/www.scientific.net/msf.1004.1088
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Comparative Numerical Analysis of the Robustness of Si and SiC PiN Diodes Against Cosmic Radiation-Induced Failure

Abstract: This work aims at extending the predictive simulation technique for cosmic ray-induced failure analysis from Si PiN diodes [1] to SiC PiN diodes. Accurate 3D cylindrical-symmetric transient simulations were performed with a minimum mesh size of 20nm at the center track of the impinging ion and a maximum time step of 0.1ps during the development of the ion-induced transient current. We made a comparative study between a SiC PiN diode and a Si PiN diode with the same blocking voltage of 1.5kV, using the same hea… Show more

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Cited by 4 publications
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