Impact of sub-cell internal luminescence yields on energy conversion efficiencies of tandem solar cells: A design principle

Zhu, Lin; Kim, Changsu; Yoshita, Masahiro; Chen, Shaoqiang; Sato, Shigeharu; Mochizuki, Takayasu; Akiyama, Hidefumi; Kanemitsu, Yoshihiko

doi:10.1063/1.4861464

Cited by 28 publications

(32 citation statements)

References 12 publications

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“…[5][6][7] However, the influence of photon recycling in PL-based measurements must be considered when deriving the internal radiative efficiency, since it has been shown previously that the thickness of the emitting material influences the photon recycling factor and thus the observed radiative lifetime. 8 Furthermore, the optical properties of the rear-side of the analysed device, such as the presence of a rear-side mirror directly below the emitting material, strongly influence the effective radiative recombination coefficient by enhancing the reabsorption of the internal photoluminescence.…”

Section: Introductionmentioning

confidence: 99%

Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

Walker

Heckelmann

Karcher

et al. 2016

Journal of Applied Physics

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A power-dependent relative photoluminescence measurement method is developed for double-heterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty. The resulting GaAs material demonstrates a 5.7 ± 0.5 ns nonradiative lifetime across all samples of similar doping (2–3 × 1017 cm−3) for an injected excess carrier concentration below 4 × 1012 cm−3. This increases considerably up to longer than 1 μs under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination.

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Section: Introductionmentioning

confidence: 99%

Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

Walker

Heckelmann

Karcher

et al. 2016

Journal of Applied Physics

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“…4,7,8 It has to be pointed out that this drastic increase is a result of the reabsorption of band-edge luminescence inside the material. Owing to the radiative recombination of carriers inside the crystal and following partial reabsorption due to overlapping emission and absorption spectra, the carrier generation is improved.…”

Section: Thin Film Solar Cell Materials and Luminescence Efficiencymentioning

confidence: 99%

“…The luminescence efficiency of the chosen semiconductor is directly linked to the solar cell efficiency. 2,4,7,8 A good example is GaAs, which has been also used as light emitter in laser diodes. The high crystal quality of GaAs enabled fabrication of solar cells with 28.8% conversion efficiency, 1 which is the highest efficiency that has been reached so far for singlejunction solar cells and close to the theoretical SQ limit.…”

Section: Thin Film Solar Cell Materials and Luminescence Efficiencymentioning

confidence: 99%

“…Therefore, highly luminescent semiconductors are excellent light absorber materials for solar cells [3][4][5][6][7][8] and allow for high open-circuit voltages. 2,9 Reversely, excellent solar-cell light absorber materials could be excellent lightemitting materials.…”

mentioning

confidence: 99%

“…2 One of the best indicators of the intrinsic material quality of a semiconductor, which in turn directly determines the carrier loss in a device, is the internal luminescence quantum efficiency. Therefore, highly luminescent semiconductors are excellent light absorber materials for solar cells [3][4][5][6][7][8] and allow for high open-circuit voltages. 2,9 Reversely, excellent solar-cell light absorber materials could be excellent lightemitting materials.…”

mentioning

confidence: 99%

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Review—Light Emission from Thin Film Solar Cell Materials: An Emerging Infrared and Visible Light Emitter

Kanemitsu

Okano

Phuong

et al. 2017

ECS J. Solid State Sci. Technol.

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In the last decade, there have been extensive studies on fabrication and physics of thin-film solar cell materials and devices. Many high-efficiency solar cell devices have been developed, and the knowledge gained in these studies can be used advantageously to produce bright light-emitting devices. In this review, we summarize recent luminescence spectroscopic studies on new solar-cell materials and discuss their photocarrier dynamics with respect to efficient light emission. © The Author(s) This special issue focuses on fundamental researches and applications for light emitters and phosphors in the infrared and visible spectral region. Here, we would like to introduce novel approaches, applying insights from thin-film solar-cell materials to the development of new light emitting materials. Recent progress in fundamental research on solar cells is remarkable as novel materials such as perovskite thin films, quantum dots, and colloidal nanocrystals being applied to fabrication of solar cells. Huge efforts in this fundamental research area lead to conversion efficiency improvements for many types of solar cells.1 There exist global demands and attention in establishments of affordable, flexible, light-weight and high conversionefficiency devices.The prerequisite as a light absorber for high-efficiency thin-film solar cells, is a direct band-gap semiconductor with large absorption coefficient and band-gap in the near infrared and visible spectral region. 2One of the best indicators of the intrinsic material quality of a semiconductor, which in turn directly determines the carrier loss in a device, is the internal luminescence quantum efficiency. Therefore, highly luminescent semiconductors are excellent light absorber materials for solar cells [3][4][5][6][7][8] and allow for high open-circuit voltages. 2,9 Reversely, excellent solar-cell light absorber materials could be excellent lightemitting materials. In fact, the electroluminescence (EL) measurement is a well-established and widely-used technique for characterizing solar cell devices.10-17 Furthermore, time-resolved photoluminescence (PL) spectroscopy based on modern laser techniques have revealed the charge carrier flow in bulk materials as well as in devices.18-23 PL and EL spectroscopy techniques are not limited to material characterization, but are also able to characterize devices. Taking account of these close relations, utilizing insights and understandings obtained from solar cell research is strategic for developments in novel luminescent materials and devices in the near infrared and visible spectral region.In this short review, we briefly summarize luminescence properties of thin-film solar cell materials that have been recently developed as thin-film light absorbers. By further discussing the photocarrier dynamics, we are able to understand how these materials can be used optimally as light emitters in novel devices. The abundant information from solar cell research can be applied to other devices as well. A deep understanding of the carrier phy...

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Determination of subcell I–V characteristics of multijunction solar cells using optical coupling

Nesswetter

Jost

Lugli

et al. 2015

Progress in Photovoltaics

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A method for the determination of the subcell I-V characteristics of multijunction solar cells in the presence of optical coupling is presented and applied to a Ga0.50In0.50P/Ga0.99In0.01As/Ge triple-junction solar cell. Each of the subcells is described by a two-diode model and can be illuminated by a narrowband light source externally. Optical coupling is then used explicitly to generate current in one subcell, which is not illuminated externally. This approach yields the magnitude of optical coupling and a relationship between the two diode parameters of each subcell. The remaining cell parameters are determined with the help of pulsed illumination. In this fashion, the open circuit voltage of individual subcells is accessible, despite the fact that not all junctions are illuminated

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Impact of sub-cell internal luminescence yields on energy conversion efficiencies of tandem solar cells: A design principle

Cited by 28 publications

References 12 publications

Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

Review—Light Emission from Thin Film Solar Cell Materials: An Emerging Infrared and Visible Light Emitter

Determination of subcell I–V characteristics of multijunction solar cells using optical coupling

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