A recently developed method to characterize the band gap energies of III-V optosemiconductors was utilized to determine temperature-invariant band gap features of multijunction solar cells. The method is based on measuring electroluminescent spectra of the solar cells at different temperatures. The normalized spectra reveal temperature-invariant energy values of the different junctions which are further converted to band gap energies. The method utilization requires a calibrated spectroradiometer and a temperature controlled mounting base for the solar cell under test, however, no knowledge about the absolute temperature of the cell under measurement. The method was tested on GaAs and GaInP solar cells that consist of single and dual junctions. The band gap energies were also derived from spectral response measurements. The differences of the determined band gap energies from the literature values were smaller than 1.1%. Compared with other band gap determination methods, the developed method yields temperature-invariant band gap characteristics; with a known uncertainty, that separated the different junctions in a multijunction device without individual biasing for the different junctions. In addition, a temperature-independent characterization parameter ensures that the operating conditions of the device under test do not affect the results. Index Terms-Band gap, light-emitting diode (LED), spectral response, temperature, III-V solar cells.
I. INTRODUCTIONM ULTIJUNCTION solar cells (MJSC) based on III-V materials are the third generation of photovoltaic cells, to allow solar energy conversion with efficiencies as high as 46% [1]. In addition to the traditional space applications, recent studies have suggested new applications for high efficiency III-V solar cells in energy harvesting systems. Sensors and devices without batteries or wired power supplies in Internet of Things applications are often utilized in indoor conditions, where ambient light is nowadays produced by use of light emitting diodes Manuscript