2015
DOI: 10.1002/pip.2722
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Determination of subcell I–V characteristics of multijunction solar cells using optical coupling

Abstract: A method for the determination of the subcell I-V characteristics of multijunction solar cells in the presence of optical coupling is presented and applied to a Ga0.50In0.50P/Ga0.99In0.01As/Ge triple-junction solar cell. Each of the subcells is described by a two-diode model and can be illuminated by a narrowband light source externally. Optical coupling is then used explicitly to generate current in one subcell, which is not illuminated externally. This approach yields the magnitude of optical coupling and a … Show more

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Cited by 8 publications
(3 citation statements)
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“…33,34 Note that a larger subcell shunt resistance in smaller-sized devices may cause a higher influence to voltage measurements: the device size of the concentrator solar cells used here is around three orders of magnitude smaller than that of solar cells used in previous studies. [33][34][35][36] Figure 8(a) shows the transient V oc under 1-ms pulsed illumination in the reference device with high shunt resistance J4 obtained for measurement-device resistance of 2 and 0.2 MΩ. For the reference device, a significant difference appears between measurements with different measurementdevice resistances.…”
Section: Discussionmentioning
confidence: 99%
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“…33,34 Note that a larger subcell shunt resistance in smaller-sized devices may cause a higher influence to voltage measurements: the device size of the concentrator solar cells used here is around three orders of magnitude smaller than that of solar cells used in previous studies. [33][34][35][36] Figure 8(a) shows the transient V oc under 1-ms pulsed illumination in the reference device with high shunt resistance J4 obtained for measurement-device resistance of 2 and 0.2 MΩ. For the reference device, a significant difference appears between measurements with different measurementdevice resistances.…”
Section: Discussionmentioning
confidence: 99%
“…32 As another approach, transient voltage measurements using pulsed light irradiation have been demonstrated to allow for the evaluation of the internal voltages of individual subcells. [33][34][35][36] The method is beneficial as the evaluation of the subcell voltage is not based on luminescence intensity, which makes the method potentially useful to study the luminescent effect. This method can be used to obtain the voltage in the subcell which is emitting luminescence, and it can be combined with LC current measurements to determine the fundamental LC properties to understand both the voltage-independent PL and the voltage-dependent EL.…”
Section: Introductionmentioning
confidence: 99%
“…[2] The band gap energy is an essential parameter to optimize the efficiency and the performance of III-V solar cells. However, in monolithic MJSC, the subcells are not accessible separately, which makes characterization and measurement procedures challenging [3], [4]. Traditional methods to measure the band gap energy of a semiconductor device include techniques based on absorption spectrum [5], ellipsometry [6], photoluminescence [7]- [10], electroluminescence [11], or spectral response [11], [12].…”
mentioning
confidence: 99%