Impact of Process Variation on Nanowire and Nanotube Device Performance

Paul, Paul; Fujita, Katsuhide; Okajima,; Lee, Myeong Soo; Wong, K.F.; Nishi, -

doi:10.1109/drc.2007.4373749

Cited by 31 publications

(19 citation statements)

References 3 publications

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“…[26][27][28][29] Although those nanostructure Bio-FETs possess high 4 sensitivity, both production and application pose major challenges due to significant device-todevice variation and complicated process integration. [30][31][32] Oxide semiconductors are leading candidates for n-type transistors and microelectronics with high yield and uniformity. [33][34][35][36] The high electron mobilities (> 10 cm 2 V −1 s −1 ) of oxide FETs guarantee high sensitivity and high signal-to-noise ratio in biosensing.…”

mentioning

confidence: 99%

Quasi-Two-Dimensional Metal Oxide Semiconductors Based Ultrasensitive Potentiometric Biosensors

et al. 2017

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Ultrasensitive field-effect transistor-based biosensors using quasi-two-dimensional metal oxide semiconductors were demonstrated. Quasi-two-dimensional low-dimensional metal oxide semiconductors were highly sensitive to electrical perturbations at the semiconductor-bio interface and showed competitive sensitivity compared with other nanomaterial-based biosensors. Also, the solution process made our platform simple and highly reproducible, which was favorable compared with other nanobioelectronics. A quasi-two-dimensional InO-based pH sensor showed a small detection limit of 0.0005 pH and detected the glucose concentration at femtomolar levels. Detailed electrical characterization unveiled how the device's parameters affect the biosensor sensitivity, and lowest detectable charge was extrapolated, which was consistent with the experimental data.

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mentioning

confidence: 99%

Quasi-Two-Dimensional Metal Oxide Semiconductors Based Ultrasensitive Potentiometric Biosensors

et al. 2017

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“…Furthermore, Paul et al [21] demonstrated that carbon nanotube field-effect transistors (CNFETs) are less sensitive to the geometry-related process variations that are the major limitation on the performance of silicon MOSFETs. While it is difficult to precisely position CNTs on the substrate, Patil et al have recently proposed a technique to design misaligned and mispositioned CNT immune circuits that can guarantee the correct function being implemented [22].…”

Section: Introductionmentioning

confidence: 99%

A carbon nanotube cortical neuron with excitatory and inhibitory dendritic computations

Joshi

Hsu

Parker

et al. 2009

2009 IEEE/NIH Life Science Systems and Applications Workshop

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A cortical neuron with carbon nanotube circuit elements that performs nonlinear dendritic computations with excitatory and inhibitory post-synaptic potentials is presented. An inhibitory synapse with controllable parameters that implement plasticity is described. The circuit design was simulated using carbon nanotube spice models, showing that the neuron fires as long as the inhibitory post-synaptic potential is weak or absent. Strong inhibitory potentials prevent the neuron from firing.

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“…Paul et al [14] demonstrated that carbon nanotube field-effect transistors (CNFETs) are less sensitive to the geometry-related process variations than silicon MOSFETs. Carbon nanotubes have the potential to be configured into 3-D arrangements, a capability we believe will become critical when implementing larger portions of the cortex due to the massive connectivity.…”

Section: Introductionmentioning

confidence: 99%

A carbon nanotube spiking cortical neuron with tunable refractory period and spiking duration

Joshi

Parker

Hsu

2010

2010 First IEEE Latin American Symposium on Circuits and Systems (LASCAS)

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This paper describes an analog tunable carbon nanotube axon hillock that exhibits spiking with control over spiking frequency and spiking duration. Experiments with the axon hillock circuit embedded in a neuron circuit demonstrate spiking patterns similar to a biological fast-spiking neuron. The circuit design is biomimetic and changes in control voltages lead to changes in key spike parameters such as spike refractory period and spiking duration. The effect of change in output spiking frequency is tested with synapses that temporally summate, and their effect on neural firing is observed. The experiments are demonstrated with SPICE simulations using carbon nanotube transistor simulation models.

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Impact of Process Variation on Nanowire and Nanotube Device Performance

Cited by 31 publications

References 3 publications

Quasi-Two-Dimensional Metal Oxide Semiconductors Based Ultrasensitive Potentiometric Biosensors

Quasi-Two-Dimensional Metal Oxide Semiconductors Based Ultrasensitive Potentiometric Biosensors

A carbon nanotube cortical neuron with excitatory and inhibitory dendritic computations

A carbon nanotube spiking cortical neuron with tunable refractory period and spiking duration

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