Impact of pressure on the resonant energy and resonant frequency for two barriers Ga_1−xAl_xAs/GaAs nanostructures

Abstract

We study the effect of hydrostatic pressure on resonant frequency (ν1) and its associated lifetime (τ1), and energy (E1) for electrons tunneling through GaAs-AlGaAs two-barrier nanostructure (TBNS). The effective mass mismatch for well and barrier materials is considered using the effective mass theory. Pressure and the Al content, which mainly affect the barrier height and consequently the TBNS’s, are found to have a significant impact on resonant lifetime, resonant frequency, and resonant energy. The current study shows that the resonance lifetime, resonant frequency, and energy are strongly influenced by the barrier thickness and well width. When comparing the results of this study to the data from the experiment, good agreements are found. The GaAs-AlGaAs TBNS's electronic devices are controlled mainly by the hydrostatic pressure.

Resonant tunneling of electrons in biased symmetric triangular double barrier nanostructure triodes

“…Following the same procedures by solving the determinant equation (40), one can obtain a transcendental equation for the odd energy states in the form…”

“…Most of the research in the literature for resonant tunneling in triangular double barrier nanostructure devices was based on the transfer matrix technique in which the resonant tunneling energies and their lifetimes were determined indirectly from the peaks of the transmission coefficients and from the half energy bandwidths, respectively. The present study is aiming to go beyond them by employing a direct computation of the resonant tunneling energies and their associated resonant tunneling lifetimes based on the complex energy model 19,20,30,31 . In the complex energy formalism, the resonant tunneling energies and their lifetimes are determined by solving two transcendental equations one for even energy states and the other one for the odd states.…”

Quasi-Resonant Tunneling States in Triangular Double-Barrier Nanostructures

“…The development of sophisticated deposition techniques such as molecular beam epitaxy (MBE) 1 and metal-organic chemical vapor deposition techniques 2 made it possible to fabricate new materials based on ban-gap engineering with the required profiles and characteristics These technological man-made materials have enormous potential applications in high-speed and high-frequency devices [3][4][5] Resonant tunneling phenomena in heterostructure materials have been widely used for studying the quasiresonant tunneling energy states and their corresponding lifetimes for rectangle double-barrier structures using different techniques like variational method 6 , Airy's function approach 7 , transfer matrix approach [8][9][10] , and for rectangle triple-barrier heterostructures [11][12][13] The effect of nonparabolicity on the resonant tunneling energies and resonant tunneling lifetimes of symmetric GaAs-Al x Ga 1-x As rectangle double-barrier nanostructured has been reported 14,15 Recently, Elkenany and Elabsy 16 have addressed the effect of pressure on the resonant tunneling energy and resonant frequency tunneling on a rectangle double-barrier Ga 1-x Al x As-GaAs nanostructure. It has been noticed that the structural properties of different profiles affect the electronic and physical properties of novel devices such as quantum rings 17,18 , quantum dots [19][20][21] , quantum wells [22][23][24] , triangular double 25,26 and multi-barriers 27 Recently, triangular novel devices have a great considerable attention experimentally [28][29][30][31][32] and theoretically [25][26][27]…”

Quasi-resonant tunneling states in triangular double-barrier nanostructures

“…The effect of nonparabolicity on the resonant tunneling energies and resonant tunneling lifetimes of symmetric GaAs-AlxGa1-xAs rectangle double-barrier nanostructured has been reported 14,15 . Recently, Elkenany and Elabsy 16 have addressed the effect of pressure on the resonant tunneling energy and resonant frequency tunneling on a rectangle double-barrier Ga1-xAlxAs-GaAs nanostructure. It has been noticed that the structural properties of different profiles affect the electronic and physical properties of novel devices such as quantum rings 17,18 , quantum dots [19][20][21] , quantum wells [22][23][24] , triangular double 25,26 and multi-barriers 27 .…”