Quasi-Resonant Tunneling States in Triangular Double-Barrier Nanostructures

Abstract

The quasi-resonant tunneling energies and lifetimes of symmetrical triangular double-barrier nanostructures fabricated from GaAs-Aly Ga1-yAs were investigated. The complex energy approach is used to calculate the resonant tunneling energy and its associated lifetime. The results show that decreasing the well width and increasing the aluminum concentration within the barrier material enhances the quasi-resonant tunneling energies for a fixed barrier thickness. Furthermore, increasing both the aluminum concentration and the barrier thickness results in longer resonant tunneling lifetimes. The current study's findings show that resonant tunneling energies and lifetimes closely match available data in the literature.