2009
DOI: 10.18524/1815-7459.2009.3.115947
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IMPACT OF PRE-IRRADIATION ON THE MAGNETIC SUSCEPTIBILITY OF Cz-Si THERMALLY TREATED AT 700-1000 °Ñ

Abstract: Abstract. Dependence of paramagnetic component of silicon magnetic susceptibility on pre-irradiation by fast neutrons (fn) after subsequent thermal treatment of samples at 700-1000 î Ñ has been studied. It has been shown based on the measurements of magnetic susceptibility that the value of the paramagnetic component arising after the said thermal treatment of silicon is influenced by up to 10 18 fn/cm 2 pre-irradiation. With the increase of the irradiation rate this impact decreases significantly. Probable me… Show more

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“…The magnetic susceptibility is measured by Faraday method [6] at room temperature in the magnetic fields of 0.5-3.5 kOe on samples of sizes 2×2×8 mm.…”
Section: Methodsmentioning
confidence: 99%
“…The magnetic susceptibility is measured by Faraday method [6] at room temperature in the magnetic fields of 0.5-3.5 kOe on samples of sizes 2×2×8 mm.…”
Section: Methodsmentioning
confidence: 99%
“…Therefore, we deal with formation of the hardening paramagnetic centers that is shown by the orientation dependences χ(H). Of course, the appearance of these centers in the thermally treated Si samples within the higher temperature range (650-1100 °C) as in [11] and at the single-axis plastic deformation of n-Si(P) samples [12] should be expected. That is why, interpreting the experimental MS data in all these cases, the probability of appearance of such paramagnetic centers should be taken into account and their share in the measured MS value should be determined.…”
Section: © 2010 V Lashkaryov Institute Of Semiconductor Physics Namentioning
confidence: 97%
“…3 at H = 4.5 kOe. It should be noted that the nonlinear character of the dependences of χ(H) that show the magnetic ordering of certain paramagnetic centers was observed not only in n-Si(P) samples at the presence of doubly-charged TDs but also in the case of these crystals undergone TT in the temperature range of 650-1100 °C [11] and also in the samples plastically deformed at the temperatures 650-700 °C [12]. In all these cases, the main stage of sample preparation for measurements is the thermal treatment at a certain temperature.…”
Section: © 2010 V Lashkaryov Institute Of Semiconductor Physics Namentioning
confidence: 98%