Impact of pre-annealing temperature on the formation of Cu2ZnSnS4 absorber layer

Pani, Bhagyashree; Singh, Ranjan K.; Singh, Udai P.

doi:10.1016/j.jallcom.2015.05.207

Cited by 11 publications

(2 citation statements)

References 35 publications

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“…The Cu/Sn/Zn stack layers were then annealed in N 2 at 300 °C for 30 min to form an alloy. [ 22 ] To synthesize CZTS films, the alloy was annealed in H 2 S for sulfurization. In principle, quality of CZTS films will be determined by the initial Cu:Sn:Zn atomic ratios in the alloy and temperature and duration of annealing of alloy in H 2 S. In our investigation, atomic ratios of the metals in the alloy were controlled by changing the thicknesses of each metal stacked layer with the deposition durations.…”

Section: Methodsmentioning

confidence: 99%

A Comparative Study: Sequential and Single‐Step‐Electrodeposited CZTS Thin Films

Fernando

Jayathilaka

Wijesundera

et al. 2022

Physica Status Solidi (a)

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CZTS (Cu2ZnSnS4) is a relatively new and promising semiconductor material suitable for photovoltaic applications due to its favorable optoelectronic properties. Of the many techniques available for growing these films, a comparative study on sequential and single‐step electrodeposition methods to grow CZTS films is carried out in this investigation to explore the possibility of improving the quality of the films using the inexpensive electrodeposition technique. Mainly in both methods, potentiostatic electrodeposition technique is adopted for growing CZTS thin films. In both methods, growth conditions of the CZTS films are optimized after measuring the photoresponses in a photoelectrochemical (PEC) cell of the films that resulted at the end of each deposition step. The observed structural and optoelectronic properties of the films reveal that, in general, structurally good and photoactive CZTS films can be prepared using both methods. Moreover, photoresponse and Mott–Schottky measurements on CZTS films in a PEC reveal that CZTS films prepared using the single‐step electrodeposition have better photoactive properties and improved doping densities. This important finding shows that when developing CZTS‐based solar cells using the inexpensive electrodeposition technique, single‐step electrodeposition is more advantageous.

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Section: Methodsmentioning

confidence: 99%

A Comparative Study: Sequential and Single‐Step‐Electrodeposited CZTS Thin Films

Fernando

Jayathilaka

Wijesundera

et al. 2022

Physica Status Solidi (a)

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“…In the case of CTZC stack, Raman results show CZTS peaks near 255, 285, 322, 331 and 358 cm −1 [25][26][27][28]. For the films prepared with a low ramping rate Cu 2−x S [31] (467 cm −1 ) phase is observed while for the films prepared at a higher ramping rate, peaks of unreacted CTS (298 cm −1 ) [32] and ZnS (274 and 354 cm −1 ) [28,33] are also present thus suggesting that sulphurization time of 1 h is insufficient for the formation of CZTS at a higher ramping rate.…”

Section: 2a Xrdmentioning

confidence: 99%

Impact of sulphurization environment on formation of $$\hbox {Cu}_{2}\hbox {ZnSnS}_{4}$$ Cu 2 ZnSnS 4 films using electron beam evaporated stacked metallic precursors

2019

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The superiority of copper zinc tin sulphide (Cu 2 ZnSnS 4 ; CZTS) over the existing absorber layer materials is inevitable owing to its cheap, non-toxic and earth abundant constituents with high absorption coefficient value. In the present study, CZTS films are prepared by sulphurizing electron beam deposited precursors of glass/Cu/Zn/Sn/Cu and glass/Cu/Sn/Zn/Cu stacking sequences in two different environments i.e., elemental S powder and 5% H 2 S + N 2 gas at different ramping rates. The effect of sulphurization environment and sulphurization ramping rate on the formation of CZTS is investigated using X-ray diffraction and Raman spectroscopy. The morphology and composition of the films are analysed respectively using field emission gun scanning electron microscopy and energy dispersive X-ray spectroscopy. It is observed that films prepared in elemental S powder at a low ramping rate exhibit better crystallinity with less impurity phases. The presence of ZnS is observed in all the films, while the presence of SnS is observed in films prepared with H 2 S gas alone, thus concluding that sulphurization in the presence of elemental S powder at a low ramping rate is highly favourable for CZTS film formation. CZTS films with minor ZnS impurity with a bandgap of 1.48 eV is successfully fabricated by using a glass/Cu/Zn/Sn/Cu precursor stack.

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A comprehensive review on Cu2ZnSnS4 (CZTS) thin film for solar cell: forecast issues and future anticipation

Baid¹,

Hashmi²,

Jain³

et al. 2021

Opt Quant Electron

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Impact of pre-annealing temperature on the formation of Cu2ZnSnS4 absorber layer

Cited by 11 publications

References 35 publications

A Comparative Study: Sequential and Single‐Step‐Electrodeposited CZTS Thin Films

A Comparative Study: Sequential and Single‐Step‐Electrodeposited CZTS Thin Films

Impact of sulphurization environment on formation of $$\hbox {Cu}_{2}\hbox {ZnSnS}_{4}$$ Cu 2 ZnSnS 4 films using electron beam evaporated stacked metallic precursors

A comprehensive review on Cu2ZnSnS4 (CZTS) thin film for solar cell: forecast issues and future anticipation

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