2006
DOI: 10.1109/mm.2006.122
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Impact of Parameter Variations on Circuits and Microarchitecture

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Cited by 94 publications
(42 citation statements)
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References 23 publications
(26 reference statements)
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“…We suspect that the affected memory cells are in physical proximity or alignment (row, column, bank) however the memory controller maps them to different address words. These observations suggest that the root cause of such simultaneous errors could be linked to local hardware defects due to manufacturing variability [14], but they could also be related to external factors that affect multiple regions of the devices at the same time.…”
Section: Multiple Simultaneous Corruptionsmentioning
confidence: 99%
“…We suspect that the affected memory cells are in physical proximity or alignment (row, column, bank) however the memory controller maps them to different address words. These observations suggest that the root cause of such simultaneous errors could be linked to local hardware defects due to manufacturing variability [14], but they could also be related to external factors that affect multiple regions of the devices at the same time.…”
Section: Multiple Simultaneous Corruptionsmentioning
confidence: 99%
“…Several techniques have been proposed to minimize process variation at the circuit and microarchitectural levels at different costs [Unsal et al 2006;Tschanz et al 2002]. There has been extensive research in the area of task allocation and scheduling for MPSoC [Braun et al 2001;Stuijk et al 2007;Bonfietti et al 2009Bonfietti et al , 2010Wang et al 2007;Chon and Kim 2009;Singhal and Bozorgzadeh 2008;Huang and Xu 2010].…”
Section: Related Workmentioning
confidence: 99%
“…However, scaling the minimum feature sizes in deep-submicron technologies has also brought variations in key transistor parameters, such as channel length and device and interconnect width. This phenomenon, known as process variation [Unsal et al 2006], significantly impacts the maximum supported frequency of individual cores in an MPSoC [Bowman et al 2002;Eisele et al 1997]. It is shown [Miranda et al 2009] that the variation in the longest path delay (the inverse of FMAX) of a very long instruction word (VLIW) processor, manufactured at 32nm technology, is up to 40%.…”
Section: Introductionmentioning
confidence: 99%
“…It is also rather unclear how scalable the mixed digital/analog designs would be in the face of increasing process variations as we move up to higher values of n and deeper into submicrometer regimes [14].…”
Section: Review Of Previous Workmentioning
confidence: 99%