Impact of oxygen composition of ZnO metal-oxide on unipolar resistive switching characteristics of Al/ZnO/Al resistive RAM (RRAM)

Lin, Chun–Chi; Tang, Chi-Chang; Wu, Shu-Ching; Juan, Pi-Chun; Kang, Tsung-Kuei

doi:10.1016/j.mee.2015.03.027

Cited by 33 publications

(10 citation statements)

References 25 publications

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“…Abundant amount of these defects may result in insufficient switching properties. Therefore, several attempts have been reported to improve ZnO as a switching layer, such as stacked with various metal electrodes [ 117 – 128 ], controlled its growth deposition [ 52 , 129 – 133 ], post-thermal treated [ 134 , 135 ], doped with various elements [ 56 , 85 – 87 , 90 , 91 , 110 , 136 – 152 ], and embedded/multilayered with various metalsor oxides [ 55 , 83 , 153 – 159 ].…”

Section: Reviewmentioning

confidence: 99%

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

et al. 2016

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In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

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Section: Reviewmentioning

confidence: 99%

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

et al. 2016

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“…It is observed that the Pt/ZnO (1 h)/ITO device presented a memory window defined as [24] ( R HRS − R LRS )/ R LRS ∼ R HRS / R LRS resulting in a value 5.2×10 11 for this device. Such a high off/on ratio has not been measured before for any resistive memory device [1,12,25]. This high ratio results in a faster reading speed, which when combined with the low forming voltages (~2–5 V) observed in all devices, results in improved recording ability.…”

Section: Resultsmentioning

confidence: 82%

Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching

Melo

Macêdo

2016

PLoS ONE

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Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM). In this article, we provide a new insight into the applicability of resistive memories. The characteristics of non-rewritable resistive memories (NRRM) were investigated. Devices with Pt/ZnO/ITO architecture were prepared using magnetron sputtering, upon which various bipolar and unipolar resistive switching tests were performed. The results showed excellent distinction between the high resistance state (HRS) and low resistance state (LRS), with RHRS/RLRS = 5.2 × 1011 for the Pt/ZnO/ITO device with deposition time of 1 h. All samples were stable for more than 104 s, indicating that the devices have excellent applicability in NRRMs.

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“…17. The 33% device shows low values of the V reset /V set voltages, better resistance ratio, and the retention reliability recorded at 0.1 stress voltage under the O 2 flow ratios of 33% and 25% remains stable for up to 10 4 for both oxygen flow conditions [197]. Therefore, oxygen composition during the deposition of ZnO-based RRAM has a significant effect on the electrical characteristics of the deposited material.…”

Section: Effect Of Deposition Parametersmentioning

confidence: 92%

“…The effect of oxygen content during the development of ZnO thin-film on the performance characteristics was demonstrated by Lin et al [197] [197] elaborates the advantage of the ZnO thin film developed under the O 2 flow ratio of 33% as shown in Fig. 17.…”

Section: Effect Of Deposition Parametersmentioning

confidence: 98%

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.

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Impact of oxygen composition of ZnO metal-oxide on unipolar resistive switching characteristics of Al/ZnO/Al resistive RAM (RRAM)

Cited by 33 publications

References 25 publications

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

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