Impact of overshoot current on set operation of atom switch

Sakamoto, Toshitsugu; Tada, Munehiro; Miyamura, Miharu; Banno, Naoki; Okamoto, Koichi; Iguchi, N.; Hada, H.

doi:10.7567/jjap.53.04ed07

Jpn. J. Appl. Phys.

2014

DOI: 10.7567/jjap.53.04ed07

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Impact of overshoot current on set operation of atom switch

Toshitsugu Sakamoto¹,

Munehiro Tada²,

Miharu Miyamura³

et al.

Abstract: Current overshoot during a set operation has significant impacts on the ON conductance and reliability of resistive change devices such as atom switches. We break the set operation into three steps: incubation, transition, and settling. We clarify their contributions to the determinations of the ON conductance of the atom switch. The variation in the transition time causes a significant variation in the ON conductance. On the basis of the ON conductance distribution, the median of the transition time of 1 ns a… Show more

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Cited by 3 publications

References 23 publications

(31 reference statements)

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Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)

Ambrogio¹,

Milo²,

Wang

et al. 2016

IEEE Electron Device Lett.

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Current overshoot due to parasitic capacitance during set transition represents a major concern for controlling the resistance and current consumption in resistive switching memory (RRAM) arrays. In this letter, the impact of current overshoot on the low-resistance state (LRS) is evaluated by means of experiments on one-transistor/one-resistor structures of HfO2 RRAM. We develop a physics-based analytical model, able to calculate the LRS resistance and the corresponding reset current by a closed-form formula. The model allows predicting the current overshoot impact for any value of compliance current, set voltage, and parasitic capacitance

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Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)

Ambrogio¹,

Milo²,

Wang

et al. 2016

IEEE Electron Device Lett.

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Voltage-Controlled Cycling Endurance of HfO<sub><italic>x</italic></sub>-Based Resistive-Switching Memory

Balatti

Ambrogio

Wang

et al. 2015

IEEE Trans. Electron Devices

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Resistive-switching memory (RRAM) based on metal oxide is currently considered as a possible candidate for future non-volatile storage and storage-class memory (SCM). To explore possible applications of RRAM, the switching variability and cycling endurance are key issues that must be carefully understood. To this purpose we studied switching variability and endurance in pulsed regime for HfOx-based RRAM. We found that the resistance window, the set/reset variability and the endurance are all controlled by the maximum voltage Vstop which is applied during the negative reset operation. We demonstrate that endurance failure is triggered by a negative set event, where the resistance suddenly decreases during reset. Cycling endurance is studied as a function of time, compliance current and Vstop, allowing to develop an Arrhenius-law model which is capable of predicting device lifetime under various condition.

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Set/Reset Switching Model of Cu Atom Switch Based on Electrolysis

Tada

Sakamoto

2017

IEEE Trans. Electron Devices

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Impact of overshoot current on set operation of atom switch

Cited by 3 publications

References 23 publications

Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)

Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)

Voltage-Controlled Cycling Endurance of HfO<sub><italic>x</italic></sub>-Based Resistive-Switching Memory

Set/Reset Switching Model of Cu Atom Switch Based on Electrolysis

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