Impact of organic inter-layer dielectric for improvement in mechanical flexibility of self-aligned coplanar in-Ga-Zn-O thin-film transistor

Kim, Hyoeun; Jang, Hye‐Won; Furuta, Mamoru; Yoon, Jeonghan; Oh, Saeroonter; Yoon, Sung‐Min

doi:10.1016/j.orgel.2021.106223

Cited by 2 publications

(1 citation statement)

References 32 publications

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“…The low-temperature process of a-IGZO TFTs enables a variety of electronics integration schemes. Using organic polymer substrates, such as polyimide, flexible (i.e., rollable and foldable) displays have been realized, which are particularly suited for curved displays in automobiles . On a huge Gen-10.5 (2940 × 3370 mm 2 ) glass substrate, a-IGZO TFTs can be fabricated efficiently at low temperatures, enabling the cheap mass production of large-area OLED televisions. − And for displays in mobile electronic devices, the small off-state leakage currents of a-IGZO TFTs are advantageous in terms of power consumption.…”

Section: Introductionmentioning

confidence: 99%

Density-Dependent Microstructures and Electromechanical Properties of Amorphous InGaZnO₄ Semiconductors: An Ab Initio Study

Cha

Kim

et al. 2022

ACS Appl. Electron. Mater.

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Amorphous oxide semiconductors have been applied to thin-film electronics on the backplanes of organic light-emitting diode (OLED) displays. In mobile and high-refresh-rate display applications, demands have been increasing for both low power consumption and high operation speed of the electronics. Here, based on ab initio calculations, we suggest that density engineering of amorphous InGaZnO 4 semiconductors can improve electrical properties. The density of an amorphous material is typically variable over a wide range through process control as well as device design and mechanical operation. It is shown here that increasing the density (up to 6.4 g/cm 3 ) of amorphous InGaZnO 4 semiconductors with respect to the conventional density (5.8 g/cm 3 ) widens the electronic energy gap by +3.8% and reduces the effective mass of electrons by −4.3%, simultaneously. In a wide range of 3.6−7.8 g/cm 3 , the electrical properties are found to vary nonmonotonically, of which the physical mechanisms combined with the microstructures are investigated in depth. Density optimization can ultimately lead to both a reduction of off-state current and an enhancement of electron mobility in amorphous InGaZnO 4 -based thin-film transistors.

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Section: Introductionmentioning

confidence: 99%

Density-Dependent Microstructures and Electromechanical Properties of Amorphous InGaZnO₄ Semiconductors: An Ab Initio Study

Cha

Kim

et al. 2022

ACS Appl. Electron. Mater.

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Bendability of polycrystalline titania thin films fabricated on plastic substrates by the sol–gel transfer technique via firing at temperatures over 600 °C

Hamano

Kozuka²

2023

J Sol-Gel Sci Technol

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Impact of organic inter-layer dielectric for improvement in mechanical flexibility of self-aligned coplanar in-Ga-Zn-O thin-film transistor

Cited by 2 publications

References 32 publications

Density-Dependent Microstructures and Electromechanical Properties of Amorphous InGaZnO₄ Semiconductors: An Ab Initio Study

Density-Dependent Microstructures and Electromechanical Properties of Amorphous InGaZnO₄ Semiconductors: An Ab Initio Study

Bendability of polycrystalline titania thin films fabricated on plastic substrates by the sol–gel transfer technique via firing at temperatures over 600 °C

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Impact of organic inter-layer dielectric for improvement in mechanical flexibility of self-aligned coplanar in-Ga-Zn-O thin-film transistor

Cited by 2 publications

References 32 publications

Density-Dependent Microstructures and Electromechanical Properties of Amorphous InGaZnO4 Semiconductors: An Ab Initio Study

Density-Dependent Microstructures and Electromechanical Properties of Amorphous InGaZnO4 Semiconductors: An Ab Initio Study

Bendability of polycrystalline titania thin films fabricated on plastic substrates by the sol–gel transfer technique via firing at temperatures over 600 °C

Contact Info

Product

Resources

About

Density-Dependent Microstructures and Electromechanical Properties of Amorphous InGaZnO₄ Semiconductors: An Ab Initio Study

Density-Dependent Microstructures and Electromechanical Properties of Amorphous InGaZnO₄ Semiconductors: An Ab Initio Study