2010 Asia-Pacific International Symposium on Electromagnetic Compatibility 2010
DOI: 10.1109/apemc.2010.5475776
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Impact of NBTI on EMC behaviours of CMOS inverter

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Cited by 6 publications
(2 citation statements)
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“…Finally they could result in the changes of circuit characteristic which lead to the drift of susceptibility threshold. Researches show that HCI and NBTI are the major factors for the degraded performance of transistors, which lead to the changes of transistor parameters [12]. Just as the causation mentioned above, the change of circuit characteristic caused by different temperatures is likely lead, and it could induce the drift of susceptibility thresholds.…”
Section: B Microcontroller 1/0 Buffermentioning
confidence: 99%
“…Finally they could result in the changes of circuit characteristic which lead to the drift of susceptibility threshold. Researches show that HCI and NBTI are the major factors for the degraded performance of transistors, which lead to the changes of transistor parameters [12]. Just as the causation mentioned above, the change of circuit characteristic caused by different temperatures is likely lead, and it could induce the drift of susceptibility thresholds.…”
Section: B Microcontroller 1/0 Buffermentioning
confidence: 99%
“…The relationships between negative bias, temperature instability, and hot carrier injection, caused by aging and the electromagnetic compatibility performance of the chip, were studied. Fernandez et al [27] concluded that the electromagnetic sensitivity of CMOS was affected by negative-bias temperature instability. The mechanism by which electromagnetic interference and thermal stress affect semiconductor devices was explained in their paper.…”
Section: The Effect Of Temperature On Emimentioning
confidence: 99%