2020
DOI: 10.1109/ted.2020.3024450
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Impact of Mechanical Stress on 3-D NAND Flash Current Conduction

Abstract: This work experimentally investigates current conduction in 3-D NAND under up to 7 GPa of externally applied compressive mechanical stress. The impact of channel crystallinity and geometry is studied by comparing four types of Si channels: polycrystalline full channel, single-crystal full channel, polycrystalline macaroni channel, and single-crystal macaroni channel. In the studied channel types, the mechanical stress was found to cause reversible degradation of I ON (up to one order of magnitude) and I OFF (u… Show more

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Cited by 8 publications
(2 citation statements)
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“…As shown in Figure 2a, the residual stress of the tungsten films after the tungsten replacement gate process was approximately 2.41 GPa, which matches reported experimental data [9]. The residual stress of the polysilicon channel at the final structure in the simulation, as shown in Figure 2b, was −280 MPa, which is also similar to the reported data [10]. The distribution of the residual stress of the polysilicon channel in 3D NAND was then analyzed when scaled.…”
Section: Methodssupporting
confidence: 87%
“…As shown in Figure 2a, the residual stress of the tungsten films after the tungsten replacement gate process was approximately 2.41 GPa, which matches reported experimental data [9]. The residual stress of the polysilicon channel at the final structure in the simulation, as shown in Figure 2b, was −280 MPa, which is also similar to the reported data [10]. The distribution of the residual stress of the polysilicon channel in 3D NAND was then analyzed when scaled.…”
Section: Methodssupporting
confidence: 87%
“…As shown in Figure 2a, the residual stress of the tungsten films after the tungsten replacement gate process was approximately 2.41 GPa, which matches reported experimental data [9]. The residual stress of the polysilicon channel at the final structure in the simulation, as shown in Figure 2b, was −280 MPa, which is also similar to the reported data [10]. The distribution of the residual stress of the polysilicon channel in 3D NAND was then analyzed when scaled.…”
Section: Methodssupporting
confidence: 83%