Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates

Single crystalline Ge thin film growth on c-plane sapphire substrates by molecular beam epitaxy (MBE)

“…The approach must also deal with a thermal expansion mismatch and a low index contrast for waveguides on the silicon substrate. [9][10][11][12][13][14][15] An alternative approach investigated here is to use sapphire as a substrate in place of silicon. This approach brings together onto one platform two of the most important inventions of the 20th century: (1) the silicon integrated circuit and (2) the semiconductor laser.…”

“…The approach must also deal with a thermal expansion mismatch and a low index contrast for waveguides on the silicon substrate. 9–15…”

Symmetry Breaking-induced Band-splitting in GaAs Thin Film by First-principles Calculations

“…Such reconstructions are characteristic of LT-GaAs and are formed by As dimerization on the surface 9,[13][14][15] . Other LT-GaAs systems are grown on (001) facets of Si or GaAs substrates, hence the prevalence of (001) facet [16][17][18] . The main outcome of the above theoretical works is the bandstructure or the density of states (DOS), which provide basis for further study of transport properties [9][10][11] .…”

Рентгеноструктурный Анализ Эпитаксиальных Слоев Со Свойствами Дислокационного Фильтра

“…Структуры GaAs/Si(001) выращивались в установке молекулярнолучевой эпитаксии [4]. Формирование слоя зарождения осуществлялось методом атомно-слоевой эпитаксии: по 20 монослоев GaP и GaAs при температурах 330 и 260 • C соответственно.…”

“…Выращивание слоя LT-GaAs нацелено на снижение плотности ПД [4]. При росте низкотемпературного GaAs происходит избыточный захват As, что приводит к увеличению параметра решетки пленки [5].…”