Impact of interfacial engineering on MgO-based resistive switching devices for low-power applications

Exploring Multifunctionality in MgO‐Based Magnetic Tunnel Junctions with Coexisting Magnetoresistance and Memristive Properties

“…Those results indicate that the electrical conduction in the LRS is dominated by a metallic conduction path while the HRS is dependent on the whole oxide layer area. [30] This demonstrates that after electroforming, typically one single filament exists and that it can be switched by the bipolar pulses. In fact, given the results obtained by performing partial set and reset processes, it can be inferred that the size of the filament can be tuned in order to obtain a large range of resistance values in the junction.…”

“…For most of the works, although the as prepared devices show good TMR values (usually ≈100%), once the electroforming is performed the device will stop displaying TMR and it cannot be recovered in the reset process. [30,34,46] In these cases, one can choose once after fabrication which devices will be utilized for their magnetic properties or their memristive ones, but they are not reconfigurable. On the other hand, some works show simultaneous TMR and memristive effects, similar to our work, although in this case, the memristive performance suffers as a result where the highest achieved R ratio was of about 3 with a concurrent 10% in TMR.…”

“…In most cases either the TMR is absent altogether or the resistance ratio of the memristive effect is greatly suppressed. [29][30][31][32][33][34][35][36] Here, we demonstrate both memristive and magnetoresistance effects in MTJ-based magnetic sensors without the degradation of either magnetic or memristive properties. Magnetoresistive sensors are of great interest for a varied range of technologies including automotive [37] and medical applications.…”

Enhancement of temperature-modulated NbO2-based relaxation oscillator via interfacial and bulk treatments

“…Figure 7 shows the XPS spectra for the Nb and elements before and after the annealing treatment. Figure 7(a) shows the Nb 3d spin-orbit doublet core level spectrum, which can be deconvoluted into two peaks at binding energy The peak at ∼531 eV represents the lattice oxygen, or the Nb-O bonding, and the peak at ∼532.3 eV represents the vacancy oxygen [43,44]. From the proportion of the peak, it is indicated that the O percentage is at 62.7% for the as-deposited sample and it increased to 64.8% for the annealed sample.…”

Unraveling the origins of the coexisting localized-interfacial mechanism in oxide-based memristors in CMOS-integrated synaptic device implementations

“…2 In recent years, several works have reported on the discovery of the gradual switching characteristics within typical memristive devices, which generally only possess abrupt switching characteristics. 3–5 Such devices typically require specific processes or conditions to achieve each switching characteristic. Biju et al demonstrated filamentary switching characteristics with a thinner switching layer (<15 nm) and gradual switching characteristics with a thicker switching layer from a WO x -based memristor.…”