available spintronic products. Its inherent nonvolatility, relatively high speed, low power dissipation, as well as quasi-infinite endurance make it an attractive alternative to transistor-based devices. [2,3] As STT-MRAM devices scale progressively, read disturbance becomes a critical barrier to overcome. [4,5] More recently, highly efficient currentinduced switching techniques have been achieved in spin-based devices with large spin-orbit coupling (SOC) materials such as heavy metals (HM) Ta and Pt, allowing write and read current paths to be decoupled. [6][7][8] By injecting an inplane electrical current through a HM, spin polarized electrons accumulate at the interface of the HM/ferromagnet (FM). The transverse spin current exerts torque on the magnetization of the FM layer, leading to deterministic spin-orbit torque (SOT) switching. For devices with perpendicular magnetic anisotropy (PMA), the polarity of a symmetrybreaking in-plane field parallel to the direction of current flow determines the chirality of SOT switching. [9,10] In many cases, it is advantageous to eliminate the use of external magnetic fields. As such, field-free magnetization switching has been demonstrated by FM or antiferromagnetic (AFM) coupling. [11,12] Apart from memory units, spin-based devices also show potential in logic-in-memory applications. [13][14][15][16][17][18][19][20] In this paper, we experimentally demonstrate a stateful SOT logic device, with a balanced ternary output that can be further processed to represent conventional Boolean logic outputs. The Boolean logic outputs due to the logical inputs can be reconfigured by changing the device magnetization and/or the read current scheme. We further demonstrate current-induced magnetization switching (CIMS) with an integrated bias field line for the generation of a local Oersted field, effecting only the intended device and sparing adjacent devices from an external field otherwise provided by an electromagnet. This design allows for onthe-fly reconfigurability by the switching chirality, and does not require initialization or reset current pulses that increase write latency. [16,21,22] The proposed SOT-driven logic device can both store and process data, and would serve as a promising reconfigurable spin-orbit torque driven nonvolatile logic-in-memory device.Driven by the need to address both the von Neumann bottleneck and scaling limits predicted by Moore's law, spintronic devices have been shown to be strong contenders for logic-in-memory applications. While several field-free spin-orbit torque (SOT)-driven logic devices have been proposed, their operation typically requires additional initialization or reset pulses, the exchange-coupled canted spins reduce both anomalous Hall sign-to-noise ratio as well as thermal stability of the ferromagnetic layer, and device-to-device variation in exchange coupling strength is expected. A reconfigurable SOT-driven logic device using a double Hall cross structure with an integrated bias field line for the generation of a local bias fie...