Impact of interface trap charges on analog/RF and linearity performances of PGP negative capacitance FET

Chaudhary, Shalini; Dewan, Basudha; Singh, Devenderpal; Sahu, Chitrakant; Yadav, Menka

doi:10.1016/j.microrel.2023.114954

Cited by 5 publications

(1 citation statement)

References 36 publications

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“…Moreover, the problem of uneven thermal distribution only increases when considering multi-core designs [8]. Therefore, one of the main problems is the stability of devices in thermal cycling modes and increased thermal loads on individual components [9]. It is known that the semiconductor substrate is one of such basic elements in the structure of the "chip".…”

Section: Introductionmentioning

confidence: 99%

Features of the occurrence of mechanical stresses in the semiconductor substrate when operating in thermal cycling mode

Koryachko,

Pshonkin,

Skvortsov

et al. 2024

Third International Conference on Optics, Computer Applications, and Materials Science (CMSD-III 2023)

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The work is devoted to the study of thermal processes in the "metal film-semiconductor substrate" structure when operating in a pulsed current mode. Experimental oscillograms, using the example of the Al-Si and Al-SiO2-Si structure, show that when a series of successive rectangular current pulses are passed through the metallized area, heat accumulates in the structure, which subsequently leads to melting of the metallization system, as well as the formation of an interphase boundary Al-Si. A study of the morphology of the silicon substrate was carried out. Based on the SEM results, it was revealed that when a single current pulse with a density j=5.10 10 A/m 2 and a duration of 500 µs was passed through, microcracks and chips were detected in silicon. Based on the temperature distribution on the surface of the semiconductor, the magnitude of mechanical stresses for the pulsed operating mode was assessed.

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Section: Introductionmentioning

confidence: 99%