Impact of Interface Recombination on Quantum Efficiency of a‐Si:H/c‐Si Solar Cells Based on Si Wires

Gudovskikh, A. S.; Kudryashov, D. A.; Baranov, Artem; Uvarov, A. V.; Морозов, И. А.; Maksimova, A. A.; Vyacheslavova, Ekaterina; Kirilenko, D. A.; Можаров, А. М.

doi:10.1002/pssa.202100339

Cited by 4 publications

(3 citation statements)

References 29 publications

(38 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the case of the NW, the oxide layer at the sidewall surface could produce an inversion of the conductivity type . The inversion of the conductivity occurs when the NW diameter is lower compared to the space charge region width . In our case, the estimated value of the space charge region width is about 1 μm, being much higher compared to the NW diameter.…”

Section: Results and Discussionmentioning

confidence: 60%

See 1 more Smart Citation

Silicon Nanowire-Based Room-Temperature Multi-environment Ammonia Detection

Kondrat'ev¹,

Морозов²,

Vyacheslavova

et al. 2022

ACS Appl. Nano Mater.

Self Cite

View full text Add to dashboard Cite

Nanowires represent numerous opportunities for nanoelectronics and sensorics, while metal contact fabrication makes the device development rather challenging. Here, we demonstrate that silicon (Si) nanowires deposited on interdigital metal contacts via simple drop casting exhibit an abrupt increase in conductivity upon exposure to ammonia vapors and aqueous solutions due to adsorption of the analyte species. To reduce the noise of the DC resistance measurements lacking ohmic conductivity, we exploit electronic impedance spectroscopy. The resistive response is found to be dependent on the ammonia content in vapor and liquid matter. The results demonstrate a detection limit of 4 μmol•L −1 (80 ppb), a sensitivity of 0.2% μmol −1 •l (0.01%•ppb −1 ), and applicability for the low-concentration detection of up to 400 μmol•L −1 (8 ppm) ammonia in aqueous solutions both directly and indirectly with a response rate of up to 0.43%•s −1 and a recovery rate of 0.31%•s −1 and show selectivity to oxidizing species. Thus, we demonstrate that the use of semiconductor nanowires in adsorption sensorics does not require the fabrication of ohmic contacts and present a simple fabrication protocol perspective for the development of highly sensitive room-temperature multi-environment sensors.

show abstract

Section: Results and Discussionmentioning

confidence: 60%

“…59 The inversion of the conductivity occurs when the NW diameter is lower compared to the space charge region width. 60 In our case, the estimated value of the space charge region width is about 1 μm, being much higher compared to the NW diameter. Thus, an inversion of the conductivity type is highly probable.…”

Section: Ammonia Vapor Testsmentioning

confidence: 51%

Silicon Nanowire-Based Room-Temperature Multi-environment Ammonia Detection

Kondrat'ev¹,

Морозов²,

Vyacheslavova

et al. 2022

ACS Appl. Nano Mater.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Once this effect is not fully compensated by the increased J SC , this will lead to a decreased V OC (V OC ¼ kT ln (I SC /I 0 )). [40][41][42][43] Indeed, light trapping is more efficient with increased SiNW density. [6,44,45] Figure 5b shows a step increase in J SC , but it flattens out for SiNW densities above 2.2 Â 10 8 cm À2 reaching a maximum of 3.9 mA cm À2 for a density of 4.3 Â 10 8 cm À2 .…”

Section: Optimizing Sinw Density For Triple-junction Devicesmentioning

confidence: 99%

Triple Radial Junction Hydrogenated Amorphous Silicon Solar Cells with >2 V Open‐Circuit Voltage

2022

View full text Add to dashboard Cite

When solar cells are used as the photoanode for direct water splitting, the output voltage required typically exceeds that of a single‐junction photovoltaic device. Toward this application, in this work, triple radial junction silicon nanowire (3RJ SiNW) solar cells are fabricated via a plasma‐assisted vapor‐liquid‐solid method using hydrogenated amorphous silicon (a‐Si:H) for all the absorber layers, as well as for the doped ones. A high open‐circuit voltage (VOC) of 2.05 V, short‐circuit current density (JSC) of 3.8 mA cm−2, and power conversion efficiency of 4.4% are obtained for solar cells with areas of 0.03 cm2 by optimizing the density of SiNWs grown on ZnO:Al/Ag/Corning glass substrates. For lower‐efficiency devices, however, VOC values as high as 2.2 V are consistently achieved. At these higher voltages, large variations in JSC are observed, attributed to small local variations in SiNW density. Herein, for the first time, the excellent potential of 3D radial junction solar cells for applications requiring high voltages and high surface areas, such as water splitting is demonstrated.

show abstract

Full Silicon Tandem Solar Cells Based on Vertically Aligned Nanostructures

Kudryashov

Морозов

Gudovskikh

2022

International Journal of Photoenergy

Self Cite

View full text Add to dashboard Cite

A three-dimensional computer simulation of flexible double-junction solar cells (SC) consisting of Si wires and p-i-n a-Si:H structures was carried out. The performance dependence on geometrical and electrical parameters was calculated. With an increase in the height of the Si wires, the open-circuit voltage ( V OC ) decreases monotonically for both the bottom Si and the top p-i-n a-Si:H junctions. The short-circuit current density ( J SC ) for the top p-i-n a-Si:H junction increases sharply with Si wire height, and then, it goes into saturation at a wire height of more than 10-15 μm. The absolute value of J SC increases (from 10.2 to 12.7 mA/cm2) with a decrease in the wire diameter (from 2 to 0.5 μm). For the bottom junction based on Si wires, the dependence of J SC on the wire height is determined by the charge carrier lifetime, doping level, and diameter, which can be associated with the effect of complete inversion of the Si wire conductivity type. For tandem SCs, the optimal wire height is 10 μm, at which efficiency of 14% can be achieved for structures based on Si wires with a diameter of 0.5 μm and a charge carrier lifetime of 10 μs. The practical implication of the developed design was experimentally demonstrated.

show abstract

Impact of Interface Recombination on Quantum Efficiency of a‐Si:H/c‐Si Solar Cells Based on Si Wires

Cited by 4 publications

References 29 publications

Silicon Nanowire-Based Room-Temperature Multi-environment Ammonia Detection

Silicon Nanowire-Based Room-Temperature Multi-environment Ammonia Detection

Triple Radial Junction Hydrogenated Amorphous Silicon Solar Cells with >2 V Open‐Circuit Voltage

Full Silicon Tandem Solar Cells Based on Vertically Aligned Nanostructures

Contact Info

Product

Resources

About