Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.
DOI: 10.1109/isqed.2003.1194767
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Impact of interconnect pattern density information on a 90 nm technology ASIC design flow

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Cited by 15 publications
(15 citation statements)
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“…The interconnect pattern density is initially limited by the design rules within 20% -80% metal fill [14]. A statistical analysis of the pattern density of a real chip showed that, typically, the maximum pattern density in actual metal layers does not exceed 60% [15]. Thus metal fill factors f in the range 0.3 -0.6 is considered.…”
Section: Methodsmentioning
confidence: 99%
“…The interconnect pattern density is initially limited by the design rules within 20% -80% metal fill [14]. A statistical analysis of the pattern density of a real chip showed that, typically, the maximum pattern density in actual metal layers does not exceed 60% [15]. Thus metal fill factors f in the range 0.3 -0.6 is considered.…”
Section: Methodsmentioning
confidence: 99%
“…This implies that just congestion-driven global routing cannot address the wire density issue efficiently. Furthermore, we observe that wire delay is near linearly proportional to wire density in global routing even with CMP effect (dishing/erosion and dummy fill) [9,20,29] and scattering effect [15] taken into consideration.…”
mentioning
confidence: 88%
“…Especially, topography (thickness) variation after CMP is shown to be systematically determined by wire density distribution [19,21,29]. Even after CMP, intra-chip topography variation can still be on the order of 20-40% [9,21].…”
mentioning
confidence: 99%
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“…The main reason for the copper CMP problems is wire density distribution. Higher wire density usually leads to copper thickness reduction due to erosion after CMP [14], [15]. Also, the reduced copper thickness after CMP can worsen the scattering effect, further increasing resistance [19].…”
Section: Manufacturability Aware Routingmentioning
confidence: 99%