Impact of improvements in ZnO thin film solution process on ZnO/Cu2O solar cell performance

Özdal, Teoman; Kılıç, Merhan; Kavak, Hamide

doi:10.1016/j.spmi.2021.106948

Cited by 14 publications

(7 citation statements)

References 46 publications

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“…The first is the lack of n-type Cu 2 O which results in an interface between the p-type Cu 2 O and other materials and a significant loss mechanism for the separation and collecting of photo-carriers [ 15 ]. The second is the minority of the carrier concentration [ 16 , 17 ]. The best solution to overcome this problem is the doping process, in order to improve the carrier concentration and the optical and electronic properties of such materials, and therefore the efficiency of photo conversion could be improved [ 4 , 18 ].…”

Section: Introductionmentioning

confidence: 99%

Enhancement of Structural, Optical and Photoelectrochemical Properties of n−Cu2O Thin Films with K Ions Doping toward Biosensor and Solar Cell Applications

et al. 2023

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n-type Cu2O thin films were grown on conductive FTO substrates using a low-cost electrodeposition method. The doping of the n−Cu2O thin films with K ions was well identified using XRD, Raman, SEM, EDX, UV-vis, PL, photocurrent, Mott–Schottky, and EIS measurements. The results of the XRD show the creation of cubic Cu2O polycrystalline and monoclinic CuO, with the crystallite sizes ranging from 55 to 25.2 nm. The Raman analysis confirmed the presence of functional groups corresponding to the Cu2O and CuO in the fabricated samples. Moreover, the samples’ crystallinity and morphology change with the doping concentrations which was confirmed by SEM. The PL results show two characteristic emission peaks at 520 and 690 nm which are due to the interband transitions in the Cu2O as well as the oxygen vacancies in the CuO, respectively. Moreover, the PL strength was quenched at higher doping concentrations which reveals that the dopant K limits e−/h+ pairs recombination by trapped electrons and holes. The optical results show that the absorption edge is positioned between 425 and 460 nm. The computed Eg for the undoped and K−doped n−Cu2O was observed to be between 2.39 and 2.21 eV. The photocurrent measurements displayed that the grown thin films have the characteristic behavior of n-type semiconductors. Furthermore, the photocurrent is enhanced by raising the doped concentration, where the maximum value was achieved with 0.1 M of K ions. The Mott–Schottky measurements revealed that the flat band potential and donor density vary with a doping concentration from −0.87 to −0.71 V and 1.3 × 1017 to 3.2 × 1017 cm−3, respectively. EIS shows that the lowest resistivity to charge transfer (Rct) was attained at a 0.1 M concentration of K ions. The outcomes indicate that doping n−Cu2O thin films are an excellent candidate for biosensor and photovoltaic applications.

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Section: Introductionmentioning

confidence: 99%

Enhancement of Structural, Optical and Photoelectrochemical Properties of n−Cu2O Thin Films with K Ions Doping toward Biosensor and Solar Cell Applications

et al. 2023

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“…A 2.2 μm thick Cu 2 O solar cell has shown a V OC of 189 mV. A ZnO/Cu 2 O solar cell was also fabricated by Ozan et al and achieved a V OC of 236 mV with lower J SC by tuning the properties of the ZnO layer . In terms of thin Cu 2 O film-based TPV, to achieve transparency, Sekkat et al fabricated ZnO/Cu 2 O TPV with ∼200 nm thick Cu 2 O with Au electrodes, resulting in a V OC of 111 mV …”

Section: Introductionmentioning

confidence: 99%

“…A ZnO/Cu 2 O solar cell was also fabricated by Ozan et al and achieved a V OC of 236 mV with lower J SC by tuning the properties of the ZnO layer. 15 In terms of thin Cu 2 O filmbased TPV, to achieve transparency, Sekkat et al fabricated ZnO/Cu 2 O TPV with ∼200 nm thick Cu 2 O with Au electrodes, resulting in a V OC of 111 mV. 16 Several numerical simulations and experimental studies were conducted to understand the origin of low photovoltaic (PV) performances (V OC and J SC ) in Cu 2 O/ZnO-based solar cells.…”

Section: Introductionmentioning

confidence: 99%

Field-Effect Passivation of the Cu₂O/ZnO Transparent Heterojunction Photovoltaic Device Using Ga₂O₃ Thin Film

Kumar

Patel

Park

et al. 2023

ACS Appl. Energy Mater.

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Photovoltaics (PV) would be more promising if light could generate electric power invisibly. This will endow more degrees of freedom to PV cells for wide-range deployment. Transparent photovoltaic (TPV) devices are the groundwork of the buildingintegrated photovoltaic (BIPV) systems that provide aesthetics to the buildings and solar energy convertor modules. TPV is adequate for the BIPV system of windows. Heterojunctions between p-type Cu 2 O and n-type ZnO have emerged as one of the most promising TPV devices. However, their inadequate transparency and a deficit of open-circuit voltage (V OC ) and shortcircuit current density (J SC ) remained an open challenge. In this work, we have fabricated a thin Ga 2 O 3 buffer layer embedded transparent ZnO/Cu 2 O heterojunction photovoltaic device, showing an average visible transmittance of more than 50%. The insertion of the Ga 2 O 3 buffer layer remarkably increases the J SC and V OC to ∼860% and ∼41%, respectively. The TPV device also demonstrated a high J SC of 3.41 mA/cm 2 under UV light. The Ga 2 O 3 layer provides a graded conduction band alignment and passivates the interface by the field-effect passivation mechanism. The Ga 2 O 3 buffer layer embedded device also demonstrated a broadband photodetection with remarkably high responsivity and detectivity of 250 mA/W and 5 × 10 11 Jones at self-biased conditions.

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“…1 Furthermore, the unique electrical and optical properties of these materials are important for solar cells and photodetector applications. 7,8 Cu 2 O/ZnO can be fabricated using different deposition techniques such as magnetron sputtering, 9 pulsed laser deposition, 10 electrochemical deposition, 11 and so forth. Compared to other production methods, the electrochemical deposition method is a simple, fast, low-cost process.…”

Section: Introductionmentioning

confidence: 99%

“…ZnO is also a well-known n-type MOS, with a band gap of 3.3 eV, high electron mobility (120 cm 2 /V s), and binding energy of exciton (60 meV) . Furthermore, the unique electrical and optical properties of these materials are important for solar cells and photodetector applications. , …”

Section: Introductionmentioning

confidence: 99%

Preparation and Characterization of Electrochemically Deposited Cu₂O/ZnO Heterojunctions on Porous Silicon

Çetinel

Utlu

2023

ACS Omega

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Cu2O/ZnO heterojunction was fabricated on porous silicon (PSi) by a two-step electrochemical deposition technique with changing current densities and deposition times, and then the PSi/Cu2O/ZnO nanostructure was systematically investigated. SEM investigation revealed that the morphologies of the ZnO nanostructures were significantly affected by the applied current density but not those of Cu2O nanostructures. It was observed that with the increase of current density from 0.1 to 0.9 mA/cm2, ZnO nanoparticles showed more intense deposition on the surface. In addition, when the deposition time increased from 10 to 80 min, at a constant current density, an intense ZnO accumulation occured on Cu2O structures. XRD analysis showed that both the polycrystallinity and the preferential orientation of ZnO nanostructures change with the deposition time. XRD analysis also revealed that Cu2O nanostructures are mostly in the polycrystalline structure. Several strong Cu2O peaks were observed for less deposition times, but those peaks diminish with increasing deposition time due to ZnO contents. According to XPS analysis, extending the deposition time from 10 to 80 min, the intensity of the Zn peaks increases, whereas the intensity of the Cu peaks decreases, which is verified by the XRD and SEM investigations. It was found from the I–V analysis that the PSi/Cu2O/ZnO samples exhibited rectifying junction and acted as a characteristical p-n heterojunction. Among the chosen experimental parameters, PSi/Cu2O/ZnO samples obtained at 0.5 mA current density and 80 min deposition times have the best junction quality and defect density.

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Impact of improvements in ZnO thin film solution process on ZnO/Cu2O solar cell performance

Cited by 14 publications

References 46 publications

Enhancement of Structural, Optical and Photoelectrochemical Properties of n−Cu2O Thin Films with K Ions Doping toward Biosensor and Solar Cell Applications

Enhancement of Structural, Optical and Photoelectrochemical Properties of n−Cu2O Thin Films with K Ions Doping toward Biosensor and Solar Cell Applications

Field-Effect Passivation of the Cu₂O/ZnO Transparent Heterojunction Photovoltaic Device Using Ga₂O₃ Thin Film

Preparation and Characterization of Electrochemically Deposited Cu₂O/ZnO Heterojunctions on Porous Silicon

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Impact of improvements in ZnO thin film solution process on ZnO/Cu2O solar cell performance

Cited by 14 publications

References 46 publications

Enhancement of Structural, Optical and Photoelectrochemical Properties of n−Cu2O Thin Films with K Ions Doping toward Biosensor and Solar Cell Applications

Enhancement of Structural, Optical and Photoelectrochemical Properties of n−Cu2O Thin Films with K Ions Doping toward Biosensor and Solar Cell Applications

Field-Effect Passivation of the Cu2O/ZnO Transparent Heterojunction Photovoltaic Device Using Ga2O3 Thin Film

Preparation and Characterization of Electrochemically Deposited Cu2O/ZnO Heterojunctions on Porous Silicon

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Field-Effect Passivation of the Cu₂O/ZnO Transparent Heterojunction Photovoltaic Device Using Ga₂O₃ Thin Film

Preparation and Characterization of Electrochemically Deposited Cu₂O/ZnO Heterojunctions on Porous Silicon