Impact of High-<i>k</i> Gate Dielectric on Self-Heating Effects in PiFETs Structure

Belkhiria, Maissa; Echouchene, Fraj; Jaba, Nejeh; Bajahzar, Abdullah; Belmabrouk, Hafedh

doi:10.1109/ted.2020.3012418

Cited by 15 publications

(3 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As it can be seen from figure 3, the temperature maximal especially in the SiO2-Si interface due to the low thermal conductivity of SiO2 layer. The temperature decreases until the substrate temperature which is similar to the previous work [10].…”

Section: Resultssupporting

confidence: 87%

See 1 more Smart Citation

Numerical simulation of Gate shape effect on Self-Heating in nano-MOSFET Transistors with high-k dielectric

Belkheria¹,

Echouchene²,

Bajahzar³

et al. 2021

Preprint

Self Cite

View full text Add to dashboard Cite

The aim of the present work is to investigate numerically the self-heating effect (SHE) in MOSFET transistors based on high-k material taking into account the deformation of the gate under the SHE. The SHE inside the MOSFET transistor is calculated using the electrothermal model based on heat transfer equation coupled with semiconductor equations. The electrothermal model have been solved in 2D-dimension using the finite element method. The high-k dielectric HfO2 have been used as gate oxide. Several gate shapes have been used to analyze their impact on SHE. It is observed that the reduction of equivalent oxide thickness (EOT) reduces the SHE in the MOSFET transistor based in high-k dielectric material. the temperature peak increases quadratically with drain voltage for all MOSFET structures. A decrease in self-heating effect is achieved using the square gate shape.

show abstract

Section: Resultssupporting

confidence: 87%

“…Otherwise, we have investigated the effect of different high-k materials such as ZrO2, HfO2, La2O3, and Al2O3 on SHE in PiFETs Structures [10]. An important reduction of SHE was obtained using these dielectric materials.…”

Section: Introductionmentioning

confidence: 99%

Numerical simulation of Gate shape effect on Self-Heating in nano-MOSFET Transistors with high-k dielectric

Belkheria¹,

Echouchene²,

Bajahzar³

et al. 2021

Preprint

Self Cite

View full text Add to dashboard Cite

show abstract

“…Therefore, since SiO 2 is inappropriate for nanodevices, the use of high-k materials is essential for overcoming the limitations of SiO 2 , which faces challenges in maintaining sufficient gate control in modern nanoscale transistors. In our previous work [35], we have compared the behavior of several high-k materials such as HfO 2 , ZrO 2 ,La 2 O 3 , and Al 2 O 3 . We have shown that Al 2 O 3 as a substitute produces significant reductions in thermal effects and can be used as a potential candidate in transistor devices.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Trap Density Effect in Gate-All-Around Field Effect Transistors Using the Finite Element Method

Belkhiria,

Aouaini,

A. Aldaghfag

et al. 2023

Electronics

Self Cite

View full text Add to dashboard Cite

Trap density refers to the density of electronic trap states within dielectric materials that can capture and release charge carriers (electrons or holes) in a semiconductor channel, affecting the transistor’s performance. This study aims to investigate the influence of trap density on the electrothermal behavior of nanowire gate-all-around GAAFET devices. The numerical solution of Poisson’s equations and continuity equations, coupled with the heat conduction model, has been used to predict the temperature inside the GAAFET device. The finite element method has been used to discretize the semiconductor equations. Investigations have been carried out on a number of physical and geometric parameters, such as oxide thickness, nanowire radius, and gate length. Their effects on output characteristics and device temperature have been discussed. A thinner oxide thickness, lower device radius, and longer channel length led to a higher current flow. Results also reveal that high trap densities can have significant impacts on the degradation of electronic devices, particularly in the context of semiconductor devices like transistors.

show abstract