Investigation of Trap Density Effect in Gate-All-Around Field Effect Transistors Using the Finite Element Method
Maissa Belkhiria,
Fatma Aouaini,
Shatha A. Aldaghfag
et al.
Abstract:Trap density refers to the density of electronic trap states within dielectric materials that can capture and release charge carriers (electrons or holes) in a semiconductor channel, affecting the transistor’s performance. This study aims to investigate the influence of trap density on the electrothermal behavior of nanowire gate-all-around GAAFET devices. The numerical solution of Poisson’s equations and continuity equations, coupled with the heat conduction model, has been used to predict the temperature ins… Show more
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