Impact of Energy Quantization on the Performance of Current-Biased SET Circuits

Single electron transistor: energy-level broadening effect and thermionic contribution

“…The average number of electrons on the island can change discretely due to quantum mechanical effects and electron−electron interaction. We notice that this concept has been reported in previous works by Miralaie et al [15] and Mahapatra [16,17].…”

A SET/MOS Hybrid Multiplier Using Frequency Synthesis

“…In the proposed multiplier, the operands are first converted from their digital representation to frequency representation, and the multiplication is performed in the frequency domain with the result being converted back to the digital representation. It should be mentioned that while the metallic SETs give the best performance of SET/MOS hybrid circuits [1]- [3], the co-fabrication of SET/MOS devices necessitates the consideration of energy quantization effects at the nanometerscale dimensions of the SET island [9]. In this work, however, we have adhered to the orthodox theory (MIB Verilog-A model) [5] for all simulations with the conventional Spectre simulator in Cadence.…”

“…If the design focuses on the large-signal behavior, typical approaches are to increase the bias current to achieve a high slew rate, or to use large capacitors to reduce the undershoot and overshoot of the output 1063-8210/$31.00 © 2012 IEEE voltage (V OUT ) [4], [5]. In SoC applications [6]- [9], to reduce the undershoot or overshoot of the output voltage, the use of a large output capacitor will require an extra pin, which is therefore not preferred. To effectively increase the slew rate instantly seems to be a better approach to cope with output voltage spikes.…”

Triple-Tunnel Junction Single Electron Transistor (Ttj-Set)

“…Among those are single-electron turnstile, 6 negative differential resistance (NDR) due to single-electron switching, 7 current standard and measurement, 8 smart universal multiple-valued logic gates, 9 voltage controlled ring oscillators, 10 neural cells, 11 CMOS-like logic gates, [12][13][14] non-CMOS-like logic gates 15,16 and CMOS-like digital inverters. [17][18][19] A conventional SET consists of a quantum-dot (QD) island placed between two tunnel-junctions, similar to a channel sandwiched between source (S) and drain (D) in a conventional FET structure. In this paper, by adding one more tunnel-junction to the metallic QD-island of a conventional SET, we have proposed a new triple-tunnel junction SET (TTJ-SET) whose schematic representation is illustrated in Fig.…”

“…Whereas, for implementing similar inverter based on conventional SETs at least two Transistors are required. [17][18][19] Furthermore, a TTJ-SET has the capability of operating as a full-or half-wave rectifier in analog applications.…”