Impact of E‐Mode Gallium Nitride High Electron Mobility Transistor with P‐Type Gate on Waveform Distortion in an AirFuel Wireless Power Transfer System

Abstract

A wireless power transfer system using commercial lateral gallium nitride (GaN)‐based high electron mobility transistor (HEMT) is studied. Waveform distortions from an ideal class‐D zero‐voltage switching topology are observed. A special method is presented to accurately measure the dynamic resistance in the nanosecond scale. The origin of distortions is traced back to both the circuit and device levels. The receiver‐side condition and dynamic ON resistance of the GaN devices, as well as the thermal effects are responsible for the waveform distortion. The severity of deterioration of the GaN device is influenced by the circuit performance. Herein, the influence of the nonideal effects of the device on the system under different working conditions is studied. It is found that such influence can be reduced by adjusting the circuit design.

Dynamic Ron Effect in GaN HEMT in a Zero-Voltage-Switching Circuit Due to Off-Resonance Operation

“…However, most of the previous studies focus on off-state stress and the on-state behavior of GaN HEMT [7]. What happens in reverse conduction for GaN needs much more understanding.…”