Dynamic Ron Effect in GaN HEMT in a Zero-Voltage-Switching Circuit Due to Off-Resonance Operation

Sun, Shaoyu; Xia, Ling; Wu, Wengang; Jin, Yufeng

doi:10.1109/jeds.2021.3099494

Cited by 1 publication

(1 citation statement)

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“…Thus, R ON degradation is a function of the switching frequency (i.e., amount of time for charge release during the device ON time) and temperature. Moreover, it is also a function of the application voltage since the amount of charge trapping increases with the electric field, which is a function of the blocking voltage [22].…”

Section: Introductionmentioning

confidence: 99%

Characterization of the Dynamic RON of 600 V GaN Switches under Operating Conditions

et al. 2023

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High-voltage GaN switches can offer tremendous advantages over silicon counterparts for the development of high-efficiency switching-mode power converters at high commutation frequency. Nonetheless, GaN devices are prone to charge-trapping effects that can be particularly relevant in the early-stage development of new technologies. Charge-trapping mechanisms are responsible for the degradation of the dynamic ON-resistance (RON) with respect to its static value: this degradation is typically dependent on the blocking voltage, the commutation frequency and temperature, and is responsible for the reduction of power converter efficiency. The characterization of this phenomenon is very valuable for the development of a new process to compare different technological solutions or for the final assessment of performance. This characterization cannot be made with traditional static or small signal measurements since RON degradation is triggered by application-like dynamic device excitations. In this paper, we propose a technique for the characterization of the dynamic RON of high-voltage GaN switches under real operating conditions: this technique is based on the design of a half bridge switching leg in which the DUT is operated under conditions that resemble its operation in a power converter. With this setup, the characterization of a 600 V GaN switch dynamic RON is performed as a function of variable blocking voltages and commutation frequency. Additionally, this technique allows the separation of thermal and trapping effects, enabling the characterization of the dynamic RON at different temperatures.

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Section: Introductionmentioning

confidence: 99%