Impact of deposition temperature on the properties of SnS thin films grown over silicon substrate—comparative study of structural and optical properties with films grown on glass substrates

Abstract

Tin sulfide (SnS) thin films were chemically deposited over silicon substrate in a temperature range of 250 °C-400 °C. The effects of deposition temperature on the structural, morphological and optical properties of the films were evaluated. All films present an orthorhombic SnS structure with a preferred orientation along (040). High absorption coefficients (in the range of 10 5 cm −1 ) were found for all obtained films with an increase in α value when deposition temperature decreases. Furthermore, the effects of substrate type were investigated based on comparison between the present results and those obtained for SnS films grown under the same deposition conditions but over glass substrate. The results suggest that the formation of SnS films onto glass substrate is faster than onto silicon substrate. It is found that the substrate nature affects the orientation growth of the films and that SnS films deposited onto Si present more defects than those deposited onto glass substrate. The optical transmittance is also restricted by the substrate type, mostly below 1000 nm. The obtained results for SnS films onto silicon suggest their promising integration within optoelectronic devices.

Structural and optical studies on PVA capped SnS films grown by chemical bath deposition for solar cell application

“…In all the deposited layers, Raman mode appeared at 94 cm -1 had the highest intensity compared to other modes. A similar trend of Raman spectra with 94 cm -1 as an intense peak was observed by Sall et al [52] in SnS films prepared by chemical spray pyrolysis. Arulantham et al [63] also observed a strong Raman mode at 94 cm -1 in SnS thin films prepared by nebulizer spray pyrolysis technique.…”

“…Among these modes, 12 are Raman active (4A g , 2B g, 4B 2g and 2B 3g ), 7 are infrared active (3B 1u , 3B 3u and 1B 2u ), and 2 are inactive (2A u ) [60] . The observed Raman modes at 94, 219 and 225 cm -1 were assigned to A g [52] whereas the mode present at 166 cm -1 was assigned to B 3g [61] and the mode at 178 cm -1 was assigned to B 2g [52] . The observed Raman modes are in good agreement with the reported data on SnS layers [52,[60][61][62][63] .…”

“…The observed Raman modes at 94, 219 and 225 cm -1 were assigned to A g [52] whereas the mode present at 166 cm -1 was assigned to B 3g [61] and the mode at 178 cm -1 was assigned to B 2g [52] . The observed Raman modes are in good agreement with the reported data on SnS layers [52,[60][61][62][63] . This high intense Raman mode at 94 cm -1 peak is transverse optic (TO) mode that corresponds to the rigid shear modes of a layer with respect to its neighbours in the a, b directions [60] .…”

“…To the best of our knowledge, there is no previous literature reported on PVA capped SnS thin films deposited by chemical bath deposition. Table 1 shows the reported literature [11,[47][48][49][50][51][52][53][54] on SnS thin films deposited using different methods. A critical analysis of the literature indicated that deposition of SnS films in all the methods, except CBD was carried out at high temperatures.…”

Computational study and characteristics of In2S3 thin films: effects of substrate nature and deposition temperature

“…As a matter of fact, the use of these compounds has posed new challenges for several research groups. Therefore, a variety of phosphorus compounds have been exploited to deposit binary semiconductor materials such as: dichalcogeno-imidodiphosphate molecules and its derivatives R 2 (E)PNHP(E)R 2 (E=O, S, Se, Te, R=alkyl, aryl, alkoxy) [3], cyclohexylphosphine compounds such as (C 6 H 11 )PH 2 ) [4] and triphenylphosphine chalcogenides such as Ph 3 PS [5] and Ph 3 PSe [6]. Others phosphorus complexes such as [Pb((S)PPh 2 ) 2 N) 2 ], [Pb((Se)PPh 2 ) 2 N) 2 ] [7] [Sb(S 2 P(OR) 2 )] 3 [8], [In(iPr 2 PSe 2 ) 3 ] and [Cu 4 (iPr 2 P 2 Se 2 ) 4 ] [9] have been also used as single-source precursors.…”