Impact of defect distribution on transport properties for Au/ZnO Schottky contacts formed with H2O2-treated unintentionally doped n-type ZnO epilayers

Lee, Sejoon; Lee, Seung Joo; Kim, Deuk Young; Kang, Tae Won

doi:10.1063/1.3374890

Cited by 26 publications

(9 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1. It is clear that the diodes grown on the sol-gel seed layer demonstrate a rather leaky characteristic, similar to an ohmic behavior; this result is similar to the reported nonsurface-treated Au/ZnO Schottky diodes [10], [19]. In contrast, a very good rectifying characteristic is revealed in the diodes grown on the hydrothermal seed layer, which demonstrates a rectification ratio as large as 8000 at bias voltages of ±2 V. The rectification ratio is even better than that of the Au/bulk-ZnO Schottky diodes with an oxygen plasma-treated ZnO surface [10].…”

Section: Resultssupporting

confidence: 73%

Non-Surface-Treated Au/ZnO Schottky Diodes Using Pre-Annealed Hydrothermal or Sol-Gel Seed Layer

Hwang

Kung

Lin

2013

IEEE Trans. Nanotechnology

View full text Add to dashboard Cite

Nonsurface-treated zinc oxide (ZnO) Schottky diodes were fabricated on a Si substrate using one of two different seed layers, prepared by either the sol-gel or hydrothermal method. Then, ZnO film was grown on a seed layer by the hydrothermal method, and Au/ZnO Schottky diodes were fabricated to study the effects of different seed layers on the electric behavior. Observations show that the Schottky diodes grown on a hydrothermal seed layer exhibit very good rectifying behavior with a rectification ratio as large as 8000 at a bias voltage of ±2 V. In contrast, an ohmic behavior is observed in the Schottky diodes with sol-gel seed layer. Capacitance-voltage measurements demonstrate that the Schottky diodes grown on the hydrothermal seed layer have a Schottky barrier height of 0.77 eV as a result of Zn vacancies. However, a surface downward band bending is obtained in the ZnO grown on the sol-gel seed layer. The downward band bending renders a high carrier concentration on the ZnO surface, which is caused by the oxygen vacancies. Atomic ratio of Zn/O was investigated using Xray photoelectron spectroscopy and carrier transport mechanism was studied by current-voltage measurement.

show abstract

Section: Resultssupporting

confidence: 73%

Non-Surface-Treated Au/ZnO Schottky Diodes Using Pre-Annealed Hydrothermal or Sol-Gel Seed Layer

Hwang

Kung

Lin

2013

IEEE Trans. Nanotechnology

View full text Add to dashboard Cite

show abstract

“…For the ZnO/TC-SLG Schottky PD, ϕ B and η were determined to be 0.61 eV and 1.16, respectively, at 300 K. In Schottky diodes, the low η manifested a clean interface between metal and semiconductor for the device, resulting in a dominance of thermionic emission rather than recombination [42]. One possible reason could be an effective removal of chemical residues from the SLG surface through the thermal cleaning process.…”

Section: Resultsmentioning

confidence: 99%

Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity

2019

Self Cite

View full text Add to dashboard Cite

The low-power, high-performance graphene/ZnO Schottky photodiodes were demonstrated through the direct sputter-growth of ZnO onto the thermally-cleaned graphene/SiO2/Si substrate at room temperature. Prior to the growth of ZnO, a thermal treatment of the graphene surface was performed at 280 °C for 10 min in a vacuum to desorb chemical residues that may serve as trap sites at the interface between graphene and ZnO. The device clearly showed a rectifying behavior with the Schottky barrier of ≈0.61 eV and an ideality factor of 1.16. Under UV illumination, the device exhibited the excellent photoresponse characteristics in both forward and reverse bias regions. When illuminating UV light with the optical power density of 0.62 mW/cm2, the device revealed a high on/off current ratio of >103 even at a low bias voltage of 0.1 V. For the transient characteristics upon switching of UV light pulses, the device represented a fast and stable photoresponse (i.e., rise time: 0.16 s, decay time: 0.19 s). From the temperature-dependent current–voltage characteristics, such an outstanding photoresponse characteristic was found to arise from the enhanced Schottky barrier homogeneity via the thermal treatment of the graphene surface. The results suggest that the ZnO/graphene Schottky diode holds promise for the application in high-performance low-power UV photodetectors.

show abstract

“…The noble metals with large work function such as Pt, Au, Ag, and Pd have been used for a Schottky contact on ZnO, 2,3 and the barrier height is not correlated with the obvious difference in the work functions. Recent reports claimed that the performance of Schottky contacts on ZnO bulk wafers were improved by various surface treatments, such as O 2 and/or O 2 /He plasma irradiation, 4 sulfide treatment, 5 UV ozone cleaning, 6 boiling H 2 O 2 treatment, 3,[7][8][9][10] and surface etching by using solutions of hydrochloric, 11 phosphoric, 12 and nitric acids, 13 before forming a Schottky contact with a metal. Surface treatment with the boiling H 2 O 2 was particularly effective in reducing the leakage current of the diode and the deep level emission photoluminescence signal: effects that were predicted by Chia-Hung Tsai et al 9 in terms of the passivation of donor behavior point defects at the surface of ZnO and a formation of an interface oxide layer.…”

Section: Introductionmentioning

confidence: 99%

Schottky contact on ZnO nano-columnar film with H2O2 treatment

Nakamura

Temmyo

2011

Journal of Applied Physics

View full text Add to dashboard Cite

The surface treatment with boiling hydrogen peroxide (H 2 O 2) solution on the surface of ZnO nano-columnar film was investigated. Field emission-SEM and TEM analysis revealed that amorphous ZnO 2 layer covers the ZnO nano-column surface through the H 2 O 2 treatment at 100 C for 1 min. X-ray photoemission spectroscopy (XPS) has been conducted on the H 2 O 2 treated ZnO surface. The surface exhibits high resistive conductivity after the H 2 O 2 treatment, suggesting that the treatment promotes a compensation effect. We demonstrate that dramatic improvement in the rectifying behavior on the Schottky diodes can be achieved by inserting a ZnO 2 interface layer between the Pt Schottky electrode and the ZnO nano-column film. The ZnO 2 interface layer promotes surface passivation and suppresses the surface leakage current. This is expected to increase the Schottky barrier height to 0.78 eV. The H 2 O 2 treated Schottky diode showed five orders of magnitude in current rectification between forward and reverse bias at 3 V.

show abstract

Impact of defect distribution on transport properties for Au/ZnO Schottky contacts formed with H2O2-treated unintentionally doped n-type ZnO epilayers

Cited by 26 publications

References 18 publications

Non-Surface-Treated Au/ZnO Schottky Diodes Using Pre-Annealed Hydrothermal or Sol-Gel Seed Layer

Non-Surface-Treated Au/ZnO Schottky Diodes Using Pre-Annealed Hydrothermal or Sol-Gel Seed Layer

Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity

Schottky contact on ZnO nano-columnar film with H2O2 treatment

Contact Info

Product

Resources

About