Impact of crystallinity towards the performance of semi-polar (11–22) GaN UV photodetector

Makinudin, Abdullah Haaziq Ahmad; Omar, Al-Zuhairi; Anuar, Afiq; Zainorin, Mohamed Zulhakim; Shuhaimi, Ahmad; DenBaars, Steven P.; Supangat, Azzuliani

doi:10.1016/j.matlet.2020.129244

Cited by 11 publications

(9 citation statements)

References 8 publications

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“…The designs of the photodetectors were categorized into four types of geometry, namely, MSM semiconductor, p-n junction, p-i-n junction, and hybrid-type geometry, as shown in Figure 4 [1,[52][53][54]. Due to its straightforward process, MSM geometry has been considered a popular geometry choice, especially in UV photodetectors that are fabricated on epitaxial GaN nanostructures [56].…”

Section: Photodetector Geometry and Metal Contactsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…Over the past few decades, III-V semiconductor materials have shown promising outcomes for optoelectronic applications such as light-emitting diodes (LEDs), laser diodes (LDs), and photodetectors [1][2][3][4][5][6]. The demands for ultraviolet (UV) photo-sensing applications have markedly increased owing to the potential advantages of UV-sensing capabilities [1,7,8]. These capabilities could cover a wide range of applications, such as missile 2 of 35 detections, solar radiation detection, flame detection, and bio-photonics [9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…These capabilities could cover a wide range of applications, such as missile 2 of 35 detections, solar radiation detection, flame detection, and bio-photonics [9][10][11][12][13]. In addition, the use of UVC radiation detection that was obtained from germicidal illumination sources was reported to be employed in surface sterilizations from COVID-19 [1]. In recent years, several attempts were accomplished to enhance the efficiency of UV photodetectors by using wide and direct bandgap semiconductor materials such as aluminum gallium nitride (AlGaN)/aluminum indium gallium nitride (AlInGaN), aluminum nitride (AlN), gallium nitride (GaN) and zinc oxide (ZnO), and other organic compounds [12,[14][15][16][17][18]; the range of the bandgaps of these materials is 0.7-6.4 eV.…”

Section: Introductionmentioning

confidence: 99%

“…In turn, GaN can be extremely versatile for UV photodetection since the separation of electron and hole in the presence of UV radiation is efficient, with fast transit time and high responsivity [17]. In addition to the aforementioned, unlike silicon (1.1 eV), GaN has a direct bandgap (3.43 eV) that could lead to a remarkable potential in UV photodetectors with high thermal stability and conductivity [1,9,23].…”

Section: Introductionmentioning

confidence: 99%

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Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

et al. 2022

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Ultraviolet photodetectors have been widely utilized in several applications, such as advanced communication, ozone sensing, air purification, flame detection, etc. Gallium nitride and its compound semiconductors have been promising candidates in photodetection applications. Unlike polar gallium nitride-based optoelectronics, non-polar gallium nitride-based optoelectronics have gained huge attention due to the piezoelectric and spontaneous polarization effect–induced quantum confined-stark effect being eliminated. In turn, non-polar gallium nitride-based photodetectors portray higher efficiency and faster response compared to the polar growth direction. To date, however, a systematic literature review of non-polar gallium nitride-based photodetectors has yet to be demonstrated. Hence, the objective of this systematic literature review is to critically analyze the data related to non-polar gallium nitride-based photodetectors. Based on the pool of literature, three categories are introduced, namely, growth and fabrication, electrical properties, and structural, morphological, and optical properties. In addition, bibliometric analysis, a precise open-source tool, was used to conduct a comprehensive science mapping analysis of non-polar gallium nitride-based photodetectors. Finally, challenges, motivations, and future opportunities of non-polar gallium nitride-based photodetectors are presented. The future opportunities of non-polar GaN-based photodetectors in terms of growth conditions, fabrication, and characterization are also presented. This systematic literature review can provide initial reading material for researchers and industries working on non-polar gallium nitride-based photodetectors.

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