Fabrication of freestanding GaN nanobelts with enhanced ultraviolet photoresponse performance

Liu, Shishi; Wang, Qiao; Xie, Yicheng; Yang, Yuqing; Wang, Hui; Dong, Jianqi; He, Chenguang; He, Longfei; Chen, Zhitao; Li, Shuti; Zhang, Kang; Wang, Xingfu

doi:10.1016/j.apsusc.2022.156168

Cited by 5 publications

(4 citation statements)

References 52 publications

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“…19,20 The Raman spectrum of GaN (blue solid line) consists of a dominant Raman peak at 567 cm −1 along with a peak at around 734 cm −1 , designated as E H 2 and A 1 (LO), respectively. 21–23 In the overlapped WSe 2 /GaN region, the characteristic Raman peaks of both WSe 2 and GaN can be distinctly observed and have no significant displacement, indicating the good quality of the heterostructure. The morphology and chemical composition of the WSe 2 nanosheets and GaN microwires were characterized by scanning electron microscopy (SEM) and dispersive spectroscopy (EDS), as shown in Fig.…”

Section: Resultsmentioning

confidence: 98%

A dual-band photodetector based on a mixed-dimensional WSe₂/GaN junction

Chen,

Wang,

Yang

et al. 2024

J. Mater. Chem. C

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Section: Resultsmentioning

confidence: 98%

A dual-band photodetector based on a mixed-dimensional WSe₂/GaN junction

Chen,

Wang,

Yang

et al. 2024

J. Mater. Chem. C

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“…Gallium nitride (GaN), with its superior properties, such as wide band gap (3.4 eV), excellent physical and chemical stability, high breakdown voltage, and carrier mobility, has become one of the most widely used third-generation semiconductor materials in the fields of optoelectronics, radio frequency, and high-power electronic applications. − It is well known that the crystal structure of wurtzite GaN is formed by the sequential stacking arrangement of one layer of Ga and one layer of N along the polar c direction . The difference in electronegativity leads to the formation of electric dipoles, which in turn results in spontaneous polarization.…”

Section: Introductionmentioning

confidence: 99%

Highly Controllable Epitaxial Growth of High-Density Nonpolar GaN Nanorod Arrays

Li,

Wang,

Chen

et al. 2024

Crystal Growth & Design

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The undesirable effects of the degraded device performance and shorter lifetime caused by the polarization electric field induced by polar GaN have contributed to an increasing interest in the fundamental research and promising applications of nonpolar GaN. Herein, we demonstrate a strategy to construct high-quality arrays of well-aligned nonpolar GaN nanorods on the Au-coated (100) γ-LiAlO 2 substrates by the chemical vapor deposition method. During the growth process, the Au particles that were originally at the tips of the nanorods were found to gradually disappear with time. The disappearance of Au particles solved the problem of catalyst contamination and also demonstrated an interesting growth mechanism: whereas the traditional vapor−liquid− solid dominated the initial growth stage, the Au catalyst began to migrate and detach under the relatively Ga-rich condition, and then the vapor−solid controlled the subsequent growth. The E 2 (high) phonon peak (567.7 cm −1 ) and the strong ultraviolet emission peak (362.0 nm) indicate that the nonpolar GaN nanorods are virtually strain-free and have a high crystallization quality. Additionally, the effects of NH 3 and the thickness of Au films on the growth of GaN nanorods were thoroughly investigated. The well-arranged nonpolar GaN nanorod arrays with excellent crystal quality will provide a referable nanomaterial choice for highperformance, high-efficiency nonpolar nanodevices.

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“…In particular, GaN-based UV PDs are potential candidates for various UV applications because of their excellent optical and electrical properties including their wide direct band gap of 3.4 eV and high saturated electron drift velocity. 2 Various traditional architectures of GaN-based PDs, including metal−oxide−semiconductor (MOS) PDs, 3 p−n photodiodes, 4 p−i−n photodiodes, 5 Schottky barrier photodiodes, 6 and metal−semiconductor−metal PDs, 7,8 have been investigated over the last 20 years.…”

Section: ■ Introductionmentioning

confidence: 99%

A Low-Dark-Current and High-Responsivity Ultraviolet Photodetector Based on a Recessed-Gate AlGaN/GaN Enhanced-Type High-Electron-Mobility Transistor

Wang,

Cai,

et al. 2024

ACS Appl. Electron. Mater.

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In recent years, an ultraviolet (UV) photodetector (PD) utilizing two-dimensional electron gas (2DEG) formed at the AlGaN/GaN heterostructure as a GaN-based recessed-gate high-electron-mobility transistor (HEMT) has become a hot topic for UV and solar blind detection. Herein, a GaN-based HEMT UV PD with a recessed gate was prepared, and the conductive channel is closed due to the GaN-based recessed gate, which keeps the device normally off without a p-GaN gate or extra gate bias; the 2DEG is fully depleted with an extremely low dark current density of 1.87 × 10 −6 mA/mm under dark conditions. Under 365 nm UV irradiation, the conductive region is restored and the device exhibits a high photo-to-dark current ratio (PDCR) of 7 × 10 8 , a peak responsivity of 1.75 × 10 4 A/W, a high specific detectivity (D*) of 4.87 × 10 16 Jones, and a superior UV-tovisible rejection ratio of 2.9 × 10 6 . Moreover, a fast response time of 1.55/1.60 ms can be maintained, which is ascribed to the use of triethylgallium in intrinsic GaN (i-GaN) epitaxy to achieve improved crystalline quality, the incorporation of a doped AlGaN layer to reduce the scattering of 2DEGs by positive polarity impurities, and the implementation of asymmetric electrodes for rapid separation and transfer of photogenerated electron−hole pairs. The results indicate that our designed recessed-gate AlGaN/GaN HEMT is an ideal UV PD with high responsivity, low dark current, and rapid response time.

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Fabrication of freestanding GaN nanobelts with enhanced ultraviolet photoresponse performance

Cited by 5 publications

References 52 publications

A dual-band photodetector based on a mixed-dimensional WSe₂/GaN junction

A dual-band photodetector based on a mixed-dimensional WSe₂/GaN junction

Highly Controllable Epitaxial Growth of High-Density Nonpolar GaN Nanorod Arrays

A Low-Dark-Current and High-Responsivity Ultraviolet Photodetector Based on a Recessed-Gate AlGaN/GaN Enhanced-Type High-Electron-Mobility Transistor

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Fabrication of freestanding GaN nanobelts with enhanced ultraviolet photoresponse performance

Cited by 5 publications

References 52 publications

A dual-band photodetector based on a mixed-dimensional WSe2/GaN junction

A dual-band photodetector based on a mixed-dimensional WSe2/GaN junction

Highly Controllable Epitaxial Growth of High-Density Nonpolar GaN Nanorod Arrays

A Low-Dark-Current and High-Responsivity Ultraviolet Photodetector Based on a Recessed-Gate AlGaN/GaN Enhanced-Type High-Electron-Mobility Transistor

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A dual-band photodetector based on a mixed-dimensional WSe₂/GaN junction

A dual-band photodetector based on a mixed-dimensional WSe₂/GaN junction