Impact of Bias and Device Structure on Gate Junction Temperature in AlGaN/GaN-on-Si HEMTs

Schwitter, Bryan K.; Parker, Anthony E.; Mahon, Simon J.; Fattorini, Anthony P.; Heimlich, Michael

doi:10.1109/ted.2014.2311660

Cited by 27 publications

(14 citation statements)

References 19 publications

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“…It is the region between the GaN epilayers and the substrate were the heat flow is hindered causing a temperature rise. The experimental results of TBR values have been published [9] and they are in good agreement with recent simulation results [10]. The AlGaN/GaN D-mode metal-insulator-semiconductor HEMT (MISHEMTs) test samples studied here use an 8-in 111 Si substrate with a thickness of 1 mm.…”

Section: Device Descriptionsupporting

confidence: 82%

“…As can be observed in Fig. 3, the power dissipation peaks first occur at the gate edge and later, as the drain voltage increases, at the edges of field plates toward [5], [10], [18] the drain side. This effect is similar to experiments reported in [15], where the highest temperature point is measured at the same location and also shows the trend of moving toward the drain.…”

Section: A Tcad Simulationsmentioning

confidence: 90%

“…where α is coefficient of the power law and κ 0 is thermal conductivity at 300 K. Table II provides parameters for thermal conductivity of the semiconductor materials, which are closely matched with [5], [10], and [18]. Note, according to the fabrication process explained in Section I, some approximations have been made in the model.…”

Section: B Fem Modelingmentioning

confidence: 99%

See 2 more Smart Citations

Influence of Field-Plate Configuration on Power Dissipation and Temperature Profiles in AlGaN/GaN on Silicon HEMTs

Sodan

Oprins

Stoffels

et al. 2015

IEEE Trans. Electron Devices

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Thermal analysis of AlGaN/GaN high-electron mobility transistors on silicon has been performed with emphasis on the influence of the field-plate configuration on power dissipation and temperature profiles along a 2-D electron gas. The results highlight the importance of the field plates in power dissipation and show the difference between various field-plate configurations. Consequently, their design is important for a good thermal behavior and reliability of the transistors. By means of coupled technology computer aided design and finite element modeling simulations, a model is developed and used to characterize test structures in the saturation regime for power densities up to 12 W/mm. In addition, experiments are presented providing RF extraction of the ac output conductance and showing the influence of self-heating in a wide frequency range. In this way, the thermal resistance is extracted. The measured results are in good agreement with the electrothermal model.

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Section: Device Descriptionsupporting

confidence: 82%

Section: A Tcad Simulationsmentioning

confidence: 90%

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Influence of Field-Plate Configuration on Power Dissipation and Temperature Profiles in AlGaN/GaN on Silicon HEMTs

Sodan

Oprins

Stoffels

et al. 2015

IEEE Trans. Electron Devices

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“…Considering the nonuniform temperature distribution along the channel, this method is foreseen to capture an average temperature under the total sensor surface. Schwitter et al [9] used a Ni/Au gate metallization as a temperature sensor with a four terminal Kelvin connection. This approach offers a higher accuracy of the maximum temperature prediction, because it senses the temperature of the gate region, which is known as the hottest area of transistors.…”

Section: Gate-rtd Techniquementioning

confidence: 99%

“…For this purpose, we have carried out the experimental thermal analysis on dedicated test transistors in order to compare and to find correlations between the experimental methods by measuring on identical samples. Five methods (four electrical and one optical) were considered for analysis: electrical methods developed in [5] and [6], low-RF output conductance measurements [7], the resistance temperature detector (RTD) technique [8], [9], and micro-Raman spectroscopy [10]. Section II describes the test transistor used for thermal analysis and elaborates on each of the applied experimental methods.…”

mentioning

confidence: 99%

Experimental Benchmarking of Electrical Methods and <inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math> </inline-formula>-Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs

Sodan

Kosemura

Stoffels

et al. 2016

IEEE Trans. Electron Devices

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In this paper, several experimental methods (electrical and optical) for channel temperature detection in AlGaN/GaN high-electron mobility transistors have been studied and experimentally benchmarked. This paper encompasses four electrical methods (two dc characterization methods, low-RF output conductance measurement, and gate-resistive sensing technique) and one optical method (micro-Raman spectroscopy), which have been frequently used to sense temperature in AlGaN/GaN transistors. The experiments are carried out on identical test structures on wafer-level conditions as well as on single dies mounted on printed circuit board for power densities up to 12 W/mm. Due to a large temperature distribution along the channel of the devices and due to the physics on which each method is based, it was shown that the differences between the measured temperatures using the different methods can be as high as 50%. Experimental results are discussed and compared with coupled TCAD and finite element modeling simulations, where significant agreements have been observed.Index Terms-AlGaN/GaN high-electron mobility transistors (HEMTs), gallium nitride, power dissipation, Raman spectroscopy, resistive temperature sensor, self-heating effect (SHE), temperature measurements, thermal analysis, thermal simulations.

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Thermal Transient Extraction for GaN HEMTs by Frequency-Resolved Gate Resistance Thermometry with Sub-100 ns Time Resolution

Cutivet

Bouchilaoun

Hassan

et al. 2018

Phys. Status Solidi A

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This paper reports on the thermal impedance measurement of GaN highelectron-mobility-transistors (HEMTs) using frequency-resolved gate resistance thermometry. Corrections methods are used to enable measurement on a very broad frequency range up to the MHz range. Transposition to timedomain is then conducted and allows, for the first time to the author's knowledge, a full determination of the device's thermal impedance with a time-resolution down to 60 ns and no limitation on the maximum time range with a single measurement technique. Measurements are performed for HEMTs with different gate-lengths and compared with literature. The experimental results demonstrate the validity and interest of the technique for the thermal impedance extraction of GaN based devices.

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Impact of Bias and Device Structure on Gate Junction Temperature in AlGaN/GaN-on-Si HEMTs

Cited by 27 publications

References 19 publications

Influence of Field-Plate Configuration on Power Dissipation and Temperature Profiles in AlGaN/GaN on Silicon HEMTs

Influence of Field-Plate Configuration on Power Dissipation and Temperature Profiles in AlGaN/GaN on Silicon HEMTs

Experimental Benchmarking of Electrical Methods and <inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math> </inline-formula>-Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs

Thermal Transient Extraction for GaN HEMTs by Frequency-Resolved Gate Resistance Thermometry with Sub-100 ns Time Resolution

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