Impact of base size and shape on formation control of multifaceted InP nanopyramids by selective area metal organic vapor phase epitaxy

Yuan, Jun; Wang, Hao; Veldhoven, P.J. van; Nötzel, R.

doi:10.1063/1.3267856

Cited by 11 publications

(12 citation statements)

References 18 publications

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“…Several studies report the formation of high-index facets during MOVPE growth of III-V nanostructures, 8,20 which can considerably affect the growth result. In Sec.…”

Section: Introductionmentioning

confidence: 99%

Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates

Moroni

Dimastrodonato

Chung

et al. 2015

Journal of Applied Physics

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We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model-based on a set of coupled reaction-diffusion equations, one for each facet in the systemaccounts for the facet-dependence of all kinetic processes (e.g., precursor decomposition, adatom diffusion, and adatom lifetimes) and has been previously applied to account for the temperature-, concentration-, and temporal-dependence of AlGaAs nanostructures on GaAs (111)B surfaces with V-grooves and pyramidal recesses. In the present study, the growth of In 0.12 Ga 0.88 As quantum wires at the bottom of V-grooves is used to determine a set of optimized kinetic parameters. Based on these parameters, we have modeled the growth of In 0.25 Ga 0.75 As nanostructures formed in pyramidal site-controlled quantum-dot systems, successfully producing a qualitative explanation for the temperature-dependence of their optical properties, which have been reported in previous studies. Finally, we present scanning electron and cross-sectional atomic force microscopy images which show previously unreported facetting at the bottom of the pyramidal recesses that allow quantum dot formation. V C 2015 AIP Publishing LLC.[http://dx

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“…Several studies report the formation of high-index facets during MOVPE growth of III-V nanostructures, 8,20 which can considerably affect the growth result. In Sec.…”

Section: Introductionmentioning

confidence: 99%

Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates

Moroni

Dimastrodonato

Chung

et al. 2015

Journal of Applied Physics

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“…2 (c and d). In general, the truncated InP pyramids exhibit a top surface close to (100) bound by four {110} and {111} side facets [9]. For the D2.5 pyramids, the top surface is bend with a valley in the center due to growth rate enhancement close to the side walls, which is not observed for the D1.8 pyramids when the extension of the top surface area is smaller than the adatom migration length [10,11].…”

Section: Methodsmentioning

confidence: 97%

Combining selective area growth and self-organized strain engineering for site-controlled local InAs/InP quantum dot arrays

Wang

Yuan

Otten

et al. 2011

Journal of Crystal Growth

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“…However, the performance is still not optimal due to the dispersion in size of the self-assembled InGaAs QDs, giving rise to inhomogeneous broadening of the gain spectrum. Recent work has used the growth of QDs on the tops of pyramids formed using selective-area growth [102] to improve the control of QD size; however, this is necessarily an expensive process.…”

Section: Advantages Of Nanotechnologymentioning

confidence: 99%

Use of Nanostructures for High Brightness Light-Emitting Diodes

Stringfellow

2011

Energy Efficiency and Renewable Energy Through Nanotechnology

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Light-emitting diodes or LEDs are expected to play a major role in efforts to utilize less energy for lighting applications due to their high efficiency, long operating life, and other ''green'' characteristics. The history of LEDs began in the 1960s. Since that time, the performance has increased exponentially while the cost has decreased dramatically. LEDs dominate the market for monochromatic displays and indicators, and are slated to provide an increasing share of the white light market. During the last decade, advances in efficiency have been obtained partly as a result of the use of nanotechnology. LEDs and lasers provided some of the first applications for quantum-well structures with nm dimensions. Future advances will almost certainly be linked to advances in the use of quantum wire and quantum dot structures. They appear to offer attractive new alternatives for single-junction white light generation. The use of self-assembled structures also offers the promise of allowing the fabrication of high efficiency devices in highly defected materials, such as those grown on less expensive substrates. This chapter reviews the basic aspects of LED devices and materials, with a focus on the AlGaInP system for red and yellow emitters and AlGaInN for blue, green, and white emitters, all grown by the organometallic vapor phase epitaxial technique. The focus is on the present and future use of nanotechnology for lighting applications.

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Impact of base size and shape on formation control of multifaceted InP nanopyramids by selective area metal organic vapor phase epitaxy

Cited by 11 publications

References 18 publications

Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates

Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates

Combining selective area growth and self-organized strain engineering for site-controlled local InAs/InP quantum dot arrays

Use of Nanostructures for High Brightness Light-Emitting Diodes

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