Impact of active layer thickness of nitrogen-doped In–Sn–Zn–O films on materials and thin film transistor performances

Li, Zhi-Yue; Yang, Haozhi; Chen, Sheng-Chi; Lu, Ying‐Bo; Xin, Yu‐Hua; Yang, Tianlin; Sun, Hui

doi:10.1088/1361-6463/aab7db

Cited by 14 publications

(9 citation statements)

References 34 publications

(37 reference statements)

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“…the substitution of In 3+ by Zn 2+ ) is beneficial in forming V O (oxygen vacancies), and Sn In (i.e. the substitution of In 3+ by Sn 4+ ) donor defects, which improve the carrier concentration [14,15].…”

Section: Introductionmentioning

confidence: 99%

Influence of Sputtering Power on the Electrical Properties of In-Sn-Zn Oxide Thin Films Deposited by High Power Impulse Magnetron Sputtering

Chen

Huo

et al. 2019

Coatings

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In-Sn-Zn oxide (ITZO) thin films have been studied as a potential material in flat panel displays due to their high carrier concentration and high mobility. In the current work, ITZO thin films were deposited on glass substrates by high-power impulse magnetron sputtering (HiPIMS) at room temperature. The influence of the sputtering power on the microstructures and electrical performance of ITZO thin films was investigated. The results show that ITZO thin films prepared by HiPIMS were dense and smooth. There were slight variations in the composition of ITZO thin films deposited at different sputtering powers. With the sputtering power increasing from 100 W to 400 W, the film’s crystallinity was enhanced. When the sputtering power was 400 W, an In2O3 (104) plane could be detected. Films with optimal electrical properties were produced at a sputtering power of 300 W, a carrier mobility of 31.25 cm2·V−1·s−1, a carrier concentration of 9.11 × 1018 cm−3, and a resistivity of 2.19 × 10−4 Ω·m.

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Section: Introductionmentioning

confidence: 99%

Influence of Sputtering Power on the Electrical Properties of In-Sn-Zn Oxide Thin Films Deposited by High Power Impulse Magnetron Sputtering

Chen

Huo

et al. 2019

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“…Over the past decades, metal oxide thin-film transistors (TFTs) have been extensively investigated for the next-generation active-matrix liquid crystal displays, organic light-emitting diode displays, and other emerging electronic circuits applications due to their excellent electrical properties and outstanding optical transparency [ 1 , 2 ]. However, a majority of the metal oxide TFTs reported to date were focused on n -type materials [ 3 ].…”

Section: Introductionmentioning

confidence: 99%

Preparation and Characterization of Solution-Processed Nanocrystalline p-Type CuAlO2 Thin-Film Transistors

Zhang

et al. 2018

Nanoscale Res Lett

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The development of p-type metal oxide thin-film transistors (TFTs) is far behind the n-type counterparts. Here, p-type CuAlO2 thin films were deposited by spin coating and annealed in nitrogen atmosphere at different temperature. The effect of post-annealing temperature on the microstructure, chemical compositions, morphology, and optical properties of the thin films was investigated systematically. The phase conversion from a mixture of CuAl2O4 and CuO to nanocrystalline CuAlO2 was achieved when annealing temperature was higher than 900 °C, as well as the transmittance, optical energy band gap, grain size, and surface roughness of the films increase with the increase of annealing temperature. Next, bottom-gate p-type TFTs with CuAlO2 channel layer were fabricated on SiO2/Si substrate. It was found that the TFT performance was strongly dependent on the physical properties and the chemical composition of channel layer. The optimized nanocrystalline CuAlO2 TFT exhibits a threshold voltage of − 1.3 V, a mobility of ~ 0.1 cm2 V−1 s−1, and a current on/off ratio of ~ 103. This report on solution-processed p-type CuAlO2 TFTs represents a significant progress towards low-cost complementary metal oxide semiconductor logic circuits.

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“…In fact, the first to appear in the field of transparent conductive thin film research are metal compounds. In 2 O 3 , SnO 2 , and AZO are typical metal compound electrode materials [ 38 ]. They have the advantages of simple preparation and excellent performance, often providing high light transmittance and high conductivity properties in the preparation of composite electrodes.…”

Section: Sandwich Structure Transparent Electrodes Of Different Materialsmentioning

confidence: 99%

Research Progress of Transparent Electrode Materials with Sandwich Structure

et al. 2021

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The nonrenewable nature of fossil energy has led to a gradual decrease in reserves. Meanwhile, as society becomes increasingly aware of the severe pollution caused by fossil energy, the demand for clean energy, such as solar energy, is rising. Moreover, in recent years, electronic devices with screens, such as mobile phones and computers, have had increasingly higher requirements for light transmittance. Whether in solar cells or in the display elements of electronic devices, transparent conductive films directly affect the performance of these devices as a cover layer. In this context, the development of transparent electrodes with low sheet resistance and high light transmittance has become one of the most urgent issues in related fields. At the same time, conventional electrodes can no longer meet the needs of some of the current flexible devices. Because of the high sheet resistance, poor light transmittance, and poor bending stability of the conventional tin-doped indium tin oxide conductive film and fluorine-doped tin oxide transparent conductive glass, there is a need to find alternatives with better performance. In this article, the progress of research on transparent electrode materials with sandwich structures and their advantages is reviewed according to the classification of conductive materials to provide reference for research in related fields.

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Impact of active layer thickness of nitrogen-doped In–Sn–Zn–O films on materials and thin film transistor performances

Cited by 14 publications

References 34 publications

Influence of Sputtering Power on the Electrical Properties of In-Sn-Zn Oxide Thin Films Deposited by High Power Impulse Magnetron Sputtering

Influence of Sputtering Power on the Electrical Properties of In-Sn-Zn Oxide Thin Films Deposited by High Power Impulse Magnetron Sputtering

Preparation and Characterization of Solution-Processed Nanocrystalline p-Type CuAlO2 Thin-Film Transistors

Research Progress of Transparent Electrode Materials with Sandwich Structure

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