The nonrenewable nature of fossil energy has led to a gradual decrease in reserves. Meanwhile, as society becomes increasingly aware of the severe pollution caused by fossil energy, the demand for clean energy, such as solar energy, is rising. Moreover, in recent years, electronic devices with screens, such as mobile phones and computers, have had increasingly higher requirements for light transmittance. Whether in solar cells or in the display elements of electronic devices, transparent conductive films directly affect the performance of these devices as a cover layer. In this context, the development of transparent electrodes with low sheet resistance and high light transmittance has become one of the most urgent issues in related fields. At the same time, conventional electrodes can no longer meet the needs of some of the current flexible devices. Because of the high sheet resistance, poor light transmittance, and poor bending stability of the conventional tin-doped indium tin oxide conductive film and fluorine-doped tin oxide transparent conductive glass, there is a need to find alternatives with better performance. In this article, the progress of research on transparent electrode materials with sandwich structures and their advantages is reviewed according to the classification of conductive materials to provide reference for research in related fields.

The development of transparent electronics has advanced metal–oxide–semiconductor Thin-Film transistor (TFT) technology. In the field of flat-panel displays, as basic units, TFTs play an important role in achieving high speed, brightness, and screen contrast ratio to display information by controlling liquid crystal pixel dots. Oxide TFTs have gradually replaced silicon-based TFTs owing to their field-effect mobility, stability, and responsiveness. In the market, n-type oxide TFTs have been widely used, and their preparation methods have been gradually refined; however, p-Type oxide TFTs with the same properties are difficult to obtain. Fabricating p-Type oxide TFTs with the same performance as n-type oxide TFTs can ensure more energy-efficient complementary electronics and better transparent display applications. This paper summarizes the basic understanding of the structure and performance of the p-Type oxide TFTs, expounding the research progress and challenges of oxide transistors. The microstructures of the three types of p-Type oxides and significant efforts to improve the performance of oxide TFTs are highlighted. Finally, the latest progress and prospects of oxide TFTs based on p-Type oxide semiconductors and other p-Type semiconductor electronic devices are discussed.