Impact of activator incorporation on red emitting rods of ZnGa2O4:Cr3+ phosphor

Safeera, T.A.; Johny, Jacob; Shaji, Sadasivan; Nien, Yung Tang; Anila, E.I.

doi:10.1016/j.msec.2018.10.059

Cited by 29 publications

(23 citation statements)

References 32 publications

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“…32 Meanwhile, for Zn, the difference between the 2p 1/2 and 2p 3/2 energy levels is calculated to be 23.03 eV, which corresponds to the bonding of Zn 2+ with O 2− rather than the formation of metallic clusters. 33 In addition, to estimate the optical band gap of this film, the transmission spectrum of the film grown on the sapphire substrate under the same growth conditions is also studied, as presented in Figure 1d. According to the figure, the transmittance of this film is as high as 80% near 280 nm, indicating high DUV transmittance owned by it.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Pt/ZnGa₂O₄/p-Si Back-to-Back Heterojunction for Deep UV Sensitive Photovoltaic Photodetection with Ultralow Dark Current and High Spectral Selectivity

Zhang

Lin

Zheng

et al. 2022

ACS Appl. Mater. Interfaces

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In this work, a strategy of constructing a back-to-back heterojunction is proposed to fabricate Si-based photovoltaic photodetectors with high deep ultraviolet (DUV) spectral selectivity. By combining Pt with a thickness of 4 nm with a ZnGa 2 O 4 / Si heterojunction, a back-to-back heterojunction is successfully constructed. Based on that, a Pt/ZnGa 2 O 4 /p-Si DUV photovoltaic detector with a low dark current density (∼9.6 × 10 −5 μA/cm 2 ), a large photo-to-dark current ratio (PDCR, >10 5 ), and a fast response speed (decay time <50 ms) is fabricated. At 0 V bias, this device displays a photoresponsivity of about 1.36 mA/W and a high deep ultraviolet−visible (DUV−vis) rejection ratio (R 258 nm /R 420 nm ) of ∼1.1 × 10 5 , which are 1−2 orders of magnitude higher than those of most photovoltaic DUV detectors reported currently. Even at a working temperature of 470 K, the detectivity of this device can still reach ∼1.23 × 10 10 Jones. In addition, compared with Au/ ZnGa 2 O 4 /Si devices, the dark current and PDCR of this Pt/ZnGa 2 O 4 /Si device decrease by 2 orders of magnitude and increase by 1 order of magnitude, respectively. The enhanced performance of this ZnGa 2 O 4 /Si device can be attributed to the higher Schottky barrier established between Pt with a higher work function and ZnGa 2 O 4 . This strategy of adopting a back-to-back heterojunction device structure to hinder the visible light photoresponse of Si-based photodetectors and thus to reduce the dark current of a device can provide a reference for preparing photovoltaic DUV detectors with excellent performance.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Pt/ZnGa₂O₄/p-Si Back-to-Back Heterojunction for Deep UV Sensitive Photovoltaic Photodetection with Ultralow Dark Current and High Spectral Selectivity

Zhang

Lin

Zheng

et al. 2022

ACS Appl. Mater. Interfaces

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“…Among them, BaGa 2 O 4 ∶Cr 0.06 showed the highest photoluminescence (PL) intensity with the optimal number of luminescence centers, and the PL intensity decreased when the concentration (x value) raised over 0.06, which was called concentration quenching caused by the decrease of the Cr-Cr distance. The nonradioactive energy migration within the doping ions was activated when the Cr-Cr distance decreased [22] . Compared with the BaGa 2 O 4 matrix, the PersL performance of the BaGa 2 O 4 ∶Cr 0.06 was significantly optimized by replacing Ga 3 (Fig.…”

Section: Experimental Results and Analysismentioning

confidence: 99%

Wavelength-tunable barium gallate persistent luminescence phosphors with enhanced luminescence

Yang¹,

Abdurahman²,

Yang³

et al. 2022

Chin. Opt. Lett.

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The near-infrared (NIR) emitting wavelength-tunable Cr 3 -doped barium gallate (BGO:Cr) persistent luminescence (PersL) phosphors with enhanced luminescence were reported. The emission wavelength of the BGO:Cr PersL phosphors was adjusted from 715 to 739 nm by varying the amount of Cr 3 and the ratio of Ga:Ba. Meanwhile, the luminescence intensity and afterglow of the BGO:Cr PersL phosphors were enhanced. BGO:Cr PersL phosphors exhibited UV excitation, LED light restimulation, PersL for more than 6 days, and excellent capability for information storage, which was expected to promote the development of cheap and wavelength-tunable PersL materials for practical applications.

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“…The diffraction peaks of β‐GC and β‐GCC at 24.2°, 30.4°, 31.7°, 35.2°, 37.3°, 38.4°, and 64.6° were indexed to the (201), (−401), (002), (111), (401), (311), and (512) crystal planes, [17] which was consistent with the predominant phase of the monoclinic β‐Ga 2 O 3 (JCPDS:41‐1103). However, β‐GCCP showed an additional peak at 21° corresponding to the GaOOH phase (Figure 1(c)), which was attributed to the lattice distortion caused by the Pr 3+ doping [23] …”

Section: Resultsmentioning

confidence: 99%

“…The emission intensity firstly increased and then decreased when the doping content of Cr 3+ rose, and the strongest emission intensity was obtained when the Cr 3+ content was 0.003 mmol. The Cr−Cr distance decreased as the doping content of Cr 3+ raised, and the non‐radiative energy migration within the dopant ion was activated, which was known as concentration quenching [23] . Therefore, the optimal Cr 3+ doping content was selected as 0.003 mmol.…”

Section: Resultsmentioning

confidence: 99%

Development of Ca²⁺, Cr³⁺ Co‐Doped and Pr³⁺, Ca²⁺, Cr³⁺ Tri‐Doped β‐Ga₂O₃ Persistent Luminescence Nanoparticles with Enhanced Luminescence

Sun¹,

Abdurahman²,

Chu³

et al. 2022

ChemistrySelect

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The introduction of co‐dopants is one of the effective ways to improve the luminescence properties of the persistent luminescence nanoparticles (PLNPs). Herein, Cr3+, Ca2+ co‐doped and Cr3+, Ca2+, Pr3+ tri‐doped β‐Ga2O3 PLNPs with enhanced persistent luminescence were developed via the hydrothermal synthesis and subsequent calcinations, which improved the persistent luminescence of the β‐Ga2O3 PLNPs. The results showed that the prepared PLNPs had a long afterglow time of more than 8 days with a signal‐to‐noise ratio (SNR) of 272 and the Quantum yield (QY) up to 74.8 %, which was renewable by LED lamps and stored information under a high‐temperature environment. The synthesized β‐Ga2O3:Cr3+, Ca2+, Pr3+ PLNPs with long afterglow time showed great potentials in optical storage.

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Impact of activator incorporation on red emitting rods of ZnGa2O4:Cr3+ phosphor

Cited by 29 publications

References 32 publications

Pt/ZnGa₂O₄/p-Si Back-to-Back Heterojunction for Deep UV Sensitive Photovoltaic Photodetection with Ultralow Dark Current and High Spectral Selectivity

Pt/ZnGa₂O₄/p-Si Back-to-Back Heterojunction for Deep UV Sensitive Photovoltaic Photodetection with Ultralow Dark Current and High Spectral Selectivity

Wavelength-tunable barium gallate persistent luminescence phosphors with enhanced luminescence

Development of Ca²⁺, Cr³⁺ Co‐Doped and Pr³⁺, Ca²⁺, Cr³⁺ Tri‐Doped β‐Ga₂O₃ Persistent Luminescence Nanoparticles with Enhanced Luminescence

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Impact of activator incorporation on red emitting rods of ZnGa2O4:Cr3+ phosphor

Cited by 29 publications

References 32 publications

Pt/ZnGa2O4/p-Si Back-to-Back Heterojunction for Deep UV Sensitive Photovoltaic Photodetection with Ultralow Dark Current and High Spectral Selectivity

Pt/ZnGa2O4/p-Si Back-to-Back Heterojunction for Deep UV Sensitive Photovoltaic Photodetection with Ultralow Dark Current and High Spectral Selectivity

Wavelength-tunable barium gallate persistent luminescence phosphors with enhanced luminescence

Development of Ca2+, Cr3+ Co‐Doped and Pr3+, Ca2+, Cr3+ Tri‐Doped β‐Ga2O3 Persistent Luminescence Nanoparticles with Enhanced Luminescence

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Product

Resources

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Pt/ZnGa₂O₄/p-Si Back-to-Back Heterojunction for Deep UV Sensitive Photovoltaic Photodetection with Ultralow Dark Current and High Spectral Selectivity

Pt/ZnGa₂O₄/p-Si Back-to-Back Heterojunction for Deep UV Sensitive Photovoltaic Photodetection with Ultralow Dark Current and High Spectral Selectivity

Development of Ca²⁺, Cr³⁺ Co‐Doped and Pr³⁺, Ca²⁺, Cr³⁺ Tri‐Doped β‐Ga₂O₃ Persistent Luminescence Nanoparticles with Enhanced Luminescence