Impact of a p-type Solar Cell Process on the Electrical Quality of Czochralski Silicon

Lauer, Kevin; Möller, Christian; Neckermann, Kristin; Blech, M.; Herms, M.; Mchedlidze, Teimuraz; Weber, J.; Meyer, Sylke

doi:10.1016/j.egypro.2013.07.321

Cited by 5 publications

(10 citation statements)

References 10 publications

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“…The crystals were doped by boron to obtain a resistivity in the range of 3–6 Ω cm. Results of the analyses of Fe content in the centre of the as‐cut wafers by various experimental methods were already presented 6. The large scatter in the reported iron‐content values between the results obtained by LT, DLTS and the inductively‐coupled plasma mass‐spectroscopy (ICPMS) methods are related to the insensitivity of the former two methods to iron atoms precipitated in the bulk of Si.…”

Section: Samples and Experimentalmentioning

confidence: 99%

Radial distribution of iron in silicon crystals grown by Czochralski method from contaminated feedstock

Mchedlidze

Weber

2014

Physica Rapid Research Ltrs

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The radial distribution of iron in Cz‐Si crystals grown from photovoltaic grade feedstock was analysed using deep level transient spectroscopy (DLTS). A high temperature annealing sequence followed by fast quenching to 273 K was used to transform iron silicide precipitates, formed after the crystal growth, to iron‐containing species detectable by DLTS. The results suggest a homogeneous radial distribution of iron over the crystal. From comparison of as‐grown and annealed samples, a strong suppression of iron precipitation close to the walls of the crystals becomes obvious and possible mechanisms of this phenomenon are discussed. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Samples and Experimentalmentioning

confidence: 99%

Radial distribution of iron in silicon crystals grown by Czochralski method from contaminated feedstock

Mchedlidze

Weber

2014

Physica Rapid Research Ltrs

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“…Three Si single crystals (labeled A, B, and C in Ref. ) with elevated iron content were specially grown by the standard Cz‐process at Bosch Solar Energy AG. The crystals were pulled from different Si feedstock and doped with boron to obtain a resistivity in the range of 3–6 Ωcm.…”

Section: Samples and Experimentalmentioning

confidence: 99%

“…In Ref. the Fe I /FeB content of the as‐grown A–C wafers was determined by lifetime measurements (LT) and DLTS. The total iron content was also determined by inductively‐coupled plasma mass‐spectroscopy (ICPMS).…”

Section: Samples and Experimentalmentioning

confidence: 99%

“…However, in the both cases only defects formed in the bulk (the base) of the solar cells were investigated. The increase for the bulk carrier lifetime was observed in iron‐contaminated mc‐Si and/or Cz‐Si solar base materials after phosphorus diffusion process followed by its relatively small deterioration after formation of electrical contacts .…”

Section: Introductionmentioning

confidence: 97%

“…Special investigations were performed for multi‐crystalline silicon (see e.g., ) to determine the dominant physical mechanism controlling the electrical quality of the material during the solar cell fabrication. For crystalline Si grown by the Czochralski process (Cz‐Si) a similar investigation appeared only recently . However, in the both cases only defects formed in the bulk (the base) of the solar cells were investigated.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Iron-related carrier traps near the n⁺p-junctions of crystalline silicon solar cells: impacts of feedstock and of the fabrication processes

Mchedlidze

Weber

2014

Phys. Status Solidi B

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An influence of the iron content in the crystal on the formation of carrier traps in the silicon solar cells was studied. Mesastructured n þ p-junctions were formed on the surface of Cz-Si wafers after various stages of a standard solar cell fabrication process. Majority carrier traps in/near the junction volume were investigated by deep level transient spectroscopy (DLTS). The trap density correlated with the total iron content in the wafers and dropped strongly with the distance from the junctions. Our results suggest that the traps were formed during the phosphorus diffusion process and/or during the subsequent cooling. The initial iron content in the wafers influenced changes in the trap concentrations at further fabrication steps. The present study could help in increasing solar cell efficiencies by tailoring the fabrication processes according to the contamination in the feedstock.

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Effect of Cooling Rate during Thermal Processes on the Electrical Properties of Cast Multi-Crystalline Silicon

Zhou

Liu

Zhou

et al. 2022

Silicon

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Photoluminescence PL imaging techniques and the minority carrier lifetime test system were employed to investigate the variation of the interstitial iron (Fe i ) concentration, the recombination activity of structural defects and the minority carrier lifetime of cast multicrystalline silicon (mc-Si) in response to the cooling rate after heating. The results showed that when the mc-Si wafers are heated to hightemperature (1000 °C) and then cooled to ambient temperature with different cooling rate, the Fe i concentration, the number of recombination active dislocations and grain boundaries increased as the cooling rate rises while the minority carrier lifetime decreased. If cast mc-Si is heated followed by faster cooling at 30 °C/s, the Fe i concentration increase by 223% and the electrical activity of grain boundaries, dislocations and intragrain increase signi cantly, that is to say, the whole wafer is heavily contaminated with metal impurities, and present extremely low minority carrier lifetime.

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Impact of a p-type Solar Cell Process on the Electrical Quality of Czochralski Silicon

Cited by 5 publications

References 10 publications

Radial distribution of iron in silicon crystals grown by Czochralski method from contaminated feedstock

Radial distribution of iron in silicon crystals grown by Czochralski method from contaminated feedstock

Iron-related carrier traps near the n⁺p-junctions of crystalline silicon solar cells: impacts of feedstock and of the fabrication processes

Effect of Cooling Rate during Thermal Processes on the Electrical Properties of Cast Multi-Crystalline Silicon

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Impact of a p-type Solar Cell Process on the Electrical Quality of Czochralski Silicon

Cited by 5 publications

References 10 publications

Radial distribution of iron in silicon crystals grown by Czochralski method from contaminated feedstock

Radial distribution of iron in silicon crystals grown by Czochralski method from contaminated feedstock

Iron-related carrier traps near the n+p-junctions of crystalline silicon solar cells: impacts of feedstock and of the fabrication processes

Effect of Cooling Rate during Thermal Processes on the Electrical Properties of Cast Multi-Crystalline Silicon

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Iron-related carrier traps near the n⁺p-junctions of crystalline silicon solar cells: impacts of feedstock and of the fabrication processes