Impact ionization rates in (100) A1 <sub>0.48</sub> In <sub>0.52</sub> As

Watanabe, Ichiro; Torikai, T.; Makita, Kikuo; Fukushima, K.; Uji, T.

doi:10.1109/55.62988

Cited by 46 publications

(13 citation statements)

References 7 publications

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“…was calculated using the expression of Kuvås and Lee [8], valid for large values of gain and conveniently independent of carrier velocities, using values for the ionization coefficients ratio taken from the work of Watanabe et al [12]. The factor [11] results from a calculation in [8] which assumes local ionization and depends on the ratio of ionization coefficients.…”

Section: Comparison With Experimentsmentioning

confidence: 99%

The effects of nonlocal impact ionization on the speed of avalanche photodiodes

Hambleton

Plimmer

et al. 2003

IEEE Trans. Electron Devices

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Article:Hambleton, P.J., Ng, B.K., Plimmer, S.A. et al. (2 more ReuseUnless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request.

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Section: Comparison With Experimentsmentioning

confidence: 99%

The effects of nonlocal impact ionization on the speed of avalanche photodiodes

Hambleton

Plimmer

et al. 2003

IEEE Trans. Electron Devices

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“…After elimination of the pre-amplifier background contribution, the avalanche noise is computed. The resulting excess noise factor versus multiplication factor is well fitted by McIntire curve with F=M0.67 [6], and thus is in good agreement with Watanabe ionization rates measurements [3].…”

Section: Resultssupporting

confidence: 83%

“…The responsivity versus reverse voltage is plotted on figure 1, where we can verify that no multiplication occurs before the complete depletion of the absorption layer. This is the condition to benefit from the larger ionization rates ratio at lower multiplication field in AlInAs [3]. The responsivity increases from 0.6 A/W at 18 V, corresponding to a gain of 1 of the 1 pm thick pin structure ( there was no anti-reflection coating on this photodiode), to more than 8 A N at about 24 V ( h=1.55 pm).…”

Section: Resultsmentioning

confidence: 93%

“…To enhance the photodetector responsivity, avalanche photodiodes are very attractive. A very interesting property of AlInAs is the ionization rates ratio alp which appears to be slightly larger than b/a in InP [3], and should lead to a reduction of the excess-noise factor and, consequently, of the minimum detectable power, especially at high bit rates. A condition to realize a large-bandwidth and low-noise device is to achieve pure electron injection.…”

Section: Introductionmentioning

confidence: 99%

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AlInAs/GaInAs SAGM-APD

Bellego¹,

Praseuth²,

Scavennec³

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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The need of high sensitivity photoreceivers in the 1.3-1.55 pm spectral range for high bit rates optical communications has maintained a large effort on avalanche photodiodes. The frequency limitation Of these devices is mainly due to the weak difference between electrons and holes ionization rates in the GaInAs/InP APDs actually developed. Thus, an effort is pursued to find a material lattice matched to InP with a large ionization rates ratio. In this paper, the quality of AlInAs as avalanche region has been evaluated in a real SAGM-APD structure by measuring responsivity, response time and excess-noise factor. Finally, A l m s / GaInAs quantum wells has also becn tested as avalanche region in an equivalent structure. IntroductionOptical fibre telecommunications in the 1.3-1.55 pm spectral range require photoreceivers with

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“…25 The holes in InP, InAlAs, and GaAs simply possess one value of the deformation potential in each case for the heavy hole, light hole, and split-off band. Figures 6, 7, and 8 summarize the calibration results and compare them with experiments and other FBMC simulations from literature: Armiento83, 27 Brennan84, 28 Cook82, 29 Dunn97, 30 Fischetti91, 24 Kim92, 31 Majerfeld74, 32 Tagu-chi86, 33 Watanabe90, 34 Windhorn83, 35 and You00. 36 The electron and hole saturation velocities v sat of InAlAs are taken from Zhou et al 37 and Palankovski and Quay.…”

Section: Particlementioning

confidence: 95%

Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes with multiplication layers made of InP, InAlAs, and GaAs

Dolgos

Meier

Schenk

et al. 2012

Journal of Applied Physics

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We investigate the high-energy charge dynamics of electrons and holes in the multiplication process of single photon avalanche diodes. The technologically important multiplication layer materials InP and In 0.52 Al 0.48 As, used in near infrared photon detectors, are analyzed and compared with GaAs. We use the full-band Monte Carlo technique to solve the Boltzmann transport equation which improves the state-of-the-art treatment of high-field carrier transport in the multiplication process. As a result of the computationally efficient treatment of the scattering rates and the parallel central processing unit power of modern computer clusters, the full-band Monte Carlo calculation of the breakdown characteristics has become feasible. The breakdown probability features a steeper rise versus the reverse bias for smaller multiplication layer widths for InP, In 0.52 Al 0.48 As, and GaAs. Both the time to avalanche breakdown and jitter decrease with shrinking size of the multiplication region for the three examined III-V semiconductors.

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Impact ionization rates in (100) A1 _0.48 In _0.52 As

Cited by 46 publications

References 7 publications

The effects of nonlocal impact ionization on the speed of avalanche photodiodes

The effects of nonlocal impact ionization on the speed of avalanche photodiodes

AlInAs/GaInAs SAGM-APD

Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes with multiplication layers made of InP, InAlAs, and GaAs

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Impact ionization rates in (100) A1 0.48 In 0.52 As

Cited by 46 publications

References 7 publications

The effects of nonlocal impact ionization on the speed of avalanche photodiodes

The effects of nonlocal impact ionization on the speed of avalanche photodiodes

AlInAs/GaInAs SAGM-APD

Full-band Monte Carlo simulation of high-energy carrier transport in single photon avalanche diodes with multiplication layers made of InP, InAlAs, and GaAs

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Product

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Impact ionization rates in (100) A1 _0.48 In _0.52 As