AlInAs/GaInAs SAGM-APD

Abstract

The need of high sensitivity photoreceivers in the 1.3-1.55 pm spectral range for high bit rates optical communications has maintained a large effort on avalanche photodiodes. The frequency limitation Of these devices is mainly due to the weak difference between electrons and holes ionization rates in the GaInAs/InP APDs actually developed. Thus, an effort is pursued to find a material lattice matched to InP with a large ionization rates ratio. In this paper, the quality of AlInAs as avalanche region has been evaluated in a real SAGM-APD structure by measuring responsivity, response time and excess-noise factor. Finally, A l m s / GaInAs quantum wells has also becn tested as avalanche region in an equivalent structure. IntroductionOptical fibre telecommunications in the 1.3-1.55 pm spectral range require photoreceivers with