Impact ionization in A^IIIB^V semiconductors in high electric fields

Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells

“…Higher quantum efficiency is obtained, if carriers acquire additional energy to that necessary for creation of single electron hole pair 23 , i.e. ΔE C >ε ie ,.…”

“…Nevertheless, use of ternary solution as an active region of heterostructure limits split-off holes participation in the carrier recombination processes. 23 This is achieved by decreasing the energy band-gap and simultaneous increase of spin splitting parameter E g << Δ S0 . Besides, in case of m l << m h , the density of the light hole energy states can be neglected for the heavy hole states.…”

The Correlation between an Electric Field and the Metastable Chlorine Ion Density Distributions in an Ultrahigh-Frequency Plasma

“…So we will consider only this latter process. Actually, the number of highenergy electrons that can ionize diminishes rapidly with energy (exponentially, as a rule) [28,10], and hence the rate of the transitions from the heavy-hole band is exponentially greater than the rate of the other channel if T * , the effective temperature of high-energy electrons (the 'tail parameter' of their distribution function), remains much less than ε g , which is the usual situation and what we assume. Now let us return to the calculation of the Fermi-leveldependent threshold for the electron ionization of the heavyhole band.…”

“…Soon after their work, a series of well-known articles by Shockley [4,5], Baraff [6], Keldysh [7] and Dumke [8] appeared where different approaches to the theory of the impact ionization in different types of semiconducting material have been worked out. A review of these results, mainly with emphasis on ordinary comparatively wide-gap semiconductors, can be found in references [9,10].…”

Impact ionization rate in direct gap semiconductors

“…Поскольку электроны, способные к ударной ионизации, описываются экспоненциаль-ным хвостом функции распределения [9], затухающим на характерном масштабе поряд-ка нескольких десятков meV, в практическом отношении для описания темпа ударной ионизации достаточно иметь выражение для W(E) лишь вблизи энергетического по-рога, где оно складывается из конкурирующих квадратичного и кубического вкладов,…”