Immobilization of oligonucleotide probes on Si3N4 surface and its application to genetic field effect transistor

Sakata, Toshiya; Kamahori, Masao; Miyahara, Yuji

doi:10.1016/j.msec.2004.08.042

Cited by 96 publications

(60 citation statements)

References 16 publications

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“…First, APTES self-assembly monolayer (SAM) was formed on a 2 × 2 cm 2 bulk Si substrate via a silanization reaction. 7,[10][11][12][13][14][15][16][17] Immediately thereafter, the APTES-immobilized Si substrate was immersed in a 25 wt % glutaraldehyde solution containing 4 mM NaBH 3 CN (pH 8.4) for 4 h for the formation of aldehyde functional groups (-CHO) on the silicon channels. Finally, the chip functionalized with the aldehyde group was immersed in a 250 µg/mL solution of mab-PSA antibody (4 mM NaBH3CN, pH 8.4) overnight, and the sensor was then immersed in a 1% BSA solution (4 mM NaBH3CN, pH 8.4) for approximately 1 h to block aldehyde functional groups that did not react with the mab-PSA.…”

Section: Methodsmentioning

confidence: 99%

Electronic Detection of Biomarkers by Si Field-Effect Transistor from Undiluted Sample Solutions with High Ionic Strengths

Ah¹,

Kim²,

Kim³

et al. 2010

Bulletin of the Korean Chemical Society

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In this study, we have developed a new detection method using Si field effect transistor (FET)-type biosensors, which enables the direct monitoring of antigen-antibody binding within very high-ionic-strength solutions such as 1×PBS and human serum. In the new method, as no additional dilution or desalting processes are required, the FET-type biosensors can be more suitable for ultrasensitive and real-time analysis of raw sample solutions. The new detection scheme is based on the observation that the strength of antigen-antibody-specific binding is significantly influenced by the ionic strength of the reaction solutions. For a prostate specific antigen (PSA), in some conditions, the binding reaction between PSA and anti-PSA in a low-ionic strength reaction solution such as 10 µM phosphate buffer is weak (reversible), while that in high-ionic strength reaction solutions such as 1×PBS or human serum is strong.Key Words: Electronic detection, PSA, Si field effect transistor (FET), Ionic strength, Real-timeStep 1 (G1 measurement)Step 2 (reaction)Step 3

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Section: Methodsmentioning

confidence: 99%

Electronic Detection of Biomarkers by Si Field-Effect Transistor from Undiluted Sample Solutions with High Ionic Strengths

Ah¹,

Kim²,

Kim³

et al. 2010

Bulletin of the Korean Chemical Society

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“…Moreover, it would allow to strongly miniaturize the devices, opening the possibility of in vivo monitoring, and to implement a complex control circuitry directly on chip, thus reaching the "easy-to-use" goal even in "lab-on-chip" applications [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Optical and Electrical Si-Based Biosensors: Fabrication and Trasduction Issues

MF¹

2014

J Anal Bioanal Tech

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In this work we discussed feasibility studies and examples of biological molecules integration in Si-based miniaturized devices. We investigated three main issues: (i) device surface functionalization, (ii) biological molecule functionality after immobilization and (iii) biosensor working principle using both electrical and optical transduction mechanisms. In the first case the idea is to fabricate electrolyte-insulator-semiconductor (EIS) and, in the near future, ion-sensitive field effect transistor (ISFET) biosensors. The electrical characterization of MOS-like capacitors with ssDNA anchored on the SiO 2 dielectric, allowed us to conclude that the structures tested are sensitive to DNA immobilization and hybridization, as demonstrated by a positive shift in the flat band voltage after ssDNA immobilization and by a further shift after prefect match hybridization. The optical transduction mechanism, using an approach closer to commercial devices (e.g. DNA-chip) is based on the use of pixelated solid state photon-detectors (Silicon Photomultipliers, SiPM). We showed this new device can be used to replace traditional optical detector in DNA-chip applications and allows designing new optical detection systems based on photon counting operation.

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“…More recently, a number of signal transduction techniques using immunosensors, based on a quartz crystal microbalance, 3) an interferometric biosensor, 4) surface plasmon resonance 5) or field effect transistor (FET) 6) have been proposed to detect antigenantibody reactions. Among these, FET-based biosensors such as genetic FET, 7,8) immune FET, 9) enzyme FET 10) and cell-based FET sensors 11,12) have been suggested as a promising alternative to the biochemical labeling methods because of their miniaturization, mass production, and high sensitivity. The fabrication of such biosensors is much more feasible by a top-down process than by a bottom-up process, and the former is more compatible with the well-established complementary metal oxidesemiconductor (CMOS) process and with monolithic integration, for the construction of electrical interfaces between the biosensor and the signal processing system.…”

Section: Introductionmentioning

confidence: 99%

Label-Free and Real-Time Immunodetection of the Avian Influenza A Hemagglutinin Peptide Using a Silicon Field-Effect Transistor Fabricated by a Nickel Self-Aligned Silicide Process

et al. 2012

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Electrical immunodetection of the avian influenza A (H5N1) hemagglutinin (HA) peptide, the IN peptide, with anti-HA antibody was demonstrated using a field-effect transistor (FET) with an n-type silicon (Si) channel and a nickel (Ni) self-aligned silicide source/drain that was fabricated by a conventional top-down process. The specific binding of the IN peptide with anti-HA antibody in phosphate buffered saline (PBS) occurs on the patterned SiO 2 surface through covalent linkage. Positive ions in the buffer create majority carriers in the n-type Si channel, leading to a rapid increase in current across that channel. However, specific binding of the negatively charged antigens on the SiO 2 surface overlaying the Si channel results in the reduction of electrons induced in the Si channel by the positive ions, causing a significant decrease in the channel current. The settling time for obtaining a stable signal change, driven by the negatively charged antigens bound to antibody, extrapolates to approximately 32 s.

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Immobilization of oligonucleotide probes on Si3N4 surface and its application to genetic field effect transistor

Cited by 96 publications

References 16 publications

Electronic Detection of Biomarkers by Si Field-Effect Transistor from Undiluted Sample Solutions with High Ionic Strengths

Electronic Detection of Biomarkers by Si Field-Effect Transistor from Undiluted Sample Solutions with High Ionic Strengths

Optical and Electrical Si-Based Biosensors: Fabrication and Trasduction Issues

Label-Free and Real-Time Immunodetection of the Avian Influenza A Hemagglutinin Peptide Using a Silicon Field-Effect Transistor Fabricated by a Nickel Self-Aligned Silicide Process

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