Immersion lithography; its potential performance and issues

“…And now the ArF-immersion technology is spotlighted as the enabling technology for below 45nm node 1) . 157nm lithography is still important for next generation node below 45 nm as backup technology 2) .…”

Section: Introductionmentioning

confidence: 99%

High-power injection lock laser platform for ArF dry/wet lithography

Mizoguchi¹,

Inoue

Fujimoto

et al. 2005

Optical Microlithography XVIII

View full text Add to dashboard Cite

“…Smaller than water, the vaporization heat works advantageously for temperature management in exposure tool. Nevertheless, high viscosity and low contact angle due to low surface tension are negative for the current nozzle concept 17) of local fill. This aspect is also discussed later.…”

Section: Status Of High Index Fluidsmentioning

confidence: 98%

Current status of high-index immersion lithography development

et al. 2007

Self Cite

View full text Add to dashboard Cite

High index immersion lithography (HIL) is one candidate for the next generation lithography technology following water immersion lithography. This technology may require only moderate changes of chip making processes and result in lower cost of ownership (CoO) compared with other technologies such as double processing, extreme ultra violet lithography (EUVL), and nano-imprinting, and other technologies. In this paper, the current status of high index lens material and immersion fluid development compared with our requirements is discussed considering microlithographic lens design feasibility and attainable NA.Keywords: High index immersion lithography, high index lens material, high index fluid, microlithographic lens

show abstract

“…If the refractive index of a medium between the optics and the imaging surface is more than 1, the resolution will be improved. 2 The issues concerning the process and the tools are discussed elsewhere. 1 They realized optical projection lithography with an NA value of 1.4 NA using oil-immersion and 453 nm wavelength illumination.…”

Section: Introductionmentioning

confidence: 99%

Talbot effect immersion lithography by self-imaging of very fine grating patterns

Satō

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

Talbot effect immersion lithography was investigated to improve resolution based on simulation results. The resolution limit of typical projection optics is determined by the wavelength k of the light source and the numerical aperture. Alternatively, the Talbot effect forms self-images with no projection optics. For our simulations, the authors proposed using a mask with a Cr pattern illuminated by 193 nm ArF laser. The authors also assumed that the gap under the mask was filled with high-index immersion fluid of n ¼ 1.64. The finite difference time domain (FDTD) optical simulation is shown for various pitches from 110 to 200 nm. So far, the distance of the self-imaging period has been estimated by second-order approximation, but the estimated result is found to differ significantly from the FDTD result. The periodic distance from low-order diffractive rays should be estimated by a higher-order approximation or an analytical method. Using Talbot effect immersion lithography, the one-dimensional line-and-space pattern of 60 nm pitch and the two-dimensional contact hole of 70 nm pitch can be transferred by a 193 nm light source.

show abstract

Immersion lithography; its potential performance and issues

Cited by 47 publications

References 0 publications

High-power injection lock laser platform for ArF dry/wet lithography

High-power injection lock laser platform for ArF dry/wet lithography

Current status of high-index immersion lithography development

Talbot effect immersion lithography by self-imaging of very fine grating patterns

Contact Info

Product

Resources

About