Imec iSiPP25G silicon photonics: a robust CMOS-based photonics technology platform

Absil, P.; Heyn, Peter De; Chen, Hongtao; Verheyen, Peter; Lepage, Guy; Pantouvaki, Marianna; Coster, J. De; Khanna, Aparna; Drissi, Youssef; Thourhout, Dries Van; Campenhout, Joris Van

doi:10.1117/12.2076262

Cited by 51 publications

(43 citation statements)

References 4 publications

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“…1(b), we also report a SEM picture of a detail of the Graphene layer on top of the Si waveguide. The Si photonic waveguide was realized within the IMEC iSiPP25G silicon on insulator (SOI) platform [18]. The Si ridge waveguide is designed to support a single transverse electric (TE) in-plane polarized optical mode with a core cross-section of 480 nm x 220 nm and 60 nm slab.…”

Section: Fabrication and Theorymentioning

confidence: 99%

Chirp management in silicon-graphene electro absorption modulators

Sorianello¹,

Contestabile²,

Midrio³

et al. 2017

Opt. Express

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Abstract:We study the frequency chirp properties of graphene-on-silicon electro-absorption modulators (EAMs). By experimentally measuring the chirp of a 100 µm long single layer graphene EAM, we show that the optoelectronic properties of graphene induce a large positive linear chirp on the optical signal generated by the modulator, giving rise to a maximum shift of the instantaneous frequency up to 1.8 GHz. We exploit this peculiar feature for chromatic-dispersion compensation in fiber optic transmission thanks to the pulse temporal lensing effect. In particular, we show dispersion compensation in a 10Gb/s transmission experiment on standard single mode fiber with temporal focusing distance (0-dB optical-signal-to-noise ratio penalty) of 60 km, and also demonstrate 100 km transmission with a bit error rate largely lower than the conventional Reed-Solomon forward error correction threshold of 10 −3 .

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Section: Fabrication and Theorymentioning

confidence: 99%

Chirp management in silicon-graphene electro absorption modulators

Sorianello¹,

Contestabile²,

Midrio³

et al. 2017

Opt. Express

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“…The proposed MRR has radius R 10 μm and coupling regions with gap g 200 nm between the access bus and ring waveguides. The silicon photonic chip was fabricated on the IMEC iSiPP25G SOI platform [17]. Graphene was grown by means of chemical vapor deposition on copper foils [18], and then transferred onto the chip by the process described in Ref.…”

Section: Fabricationmentioning

confidence: 99%

Capacitive actuation and switching of add–drop graphene-silicon micro-ring filters

Cassese¹,

Giambra²,

Sorianello³

et al. 2017

Photon. Res.

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We propose and experimentally demonstrate capacitive actuation of a graphene-silicon micro-ring add/drop filter. The mechanism is based on a silicon-SiO 2 -graphene capacitor on top of the ring waveguide. We show the capacitive actuation of the add/drop functionality by a voltage-driven change of the graphene optical absorption. The proposed capacitive solution overcomes the need for continuous heating to keep tuned the filter's in/out resonance and therefore eliminates "in operation" energy consumption.

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“…2. Thermo-optic and carrier-depletion phase modulation in silicon photonics fabricated with standard doping processes [20].…”

Section: Silicon Photonic Phase Modulationmentioning

confidence: 99%

Integrated Silicon Photonics for High-Speed Quantum Key Distribution

Kennard

Sibson

Stanisic

et al. 2017

Conference on Lasers and Electro-Optics

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General rightsThis document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Integrated photonics offers great potential for quantum communication devices in terms of complexity, robustness, and scalability. Silicon photonics in particular is a leading platform for quantum photonic technologies, with further benefits of miniaturization, cost-effective device manufacture, and compatibility with CMOS microelectronics. However, effective techniques for high-speed modulation of quantum states in standard silicon photonic platforms have been limited. Here we overcome this limitation and demonstrate high-speed low-error quantum key distribution modulation with silicon photonic devices combining slow thermo-optic DC biases and fast (10 GHz bandwidth) carrier-depletion modulation. The ability to scale up these integrated circuits and incorporate microelectronics opens the way to new and advanced integrated quantum communication technologies and larger adoption of quantumsecured communications.

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Imec iSiPP25G silicon photonics: a robust CMOS-based photonics technology platform

Cited by 51 publications

References 4 publications

Chirp management in silicon-graphene electro absorption modulators

Chirp management in silicon-graphene electro absorption modulators

Capacitive actuation and switching of add–drop graphene-silicon micro-ring filters

Integrated Silicon Photonics for High-Speed Quantum Key Distribution

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