Imaging: The road ahead for car night-vision

Källhammer, Jan-Erik

doi:10.1038/nphoton.2006.5

Cited by 63 publications

(39 citation statements)

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“…[1][2][3] Although commercial IR photodetectors exist, these are based on epitaxially grown material systems such as InGaAs, InAs, HgCdTe, and type-II super-lattices; HgCdTe, also called MCT (Mercury-Cadmium-Telluride), can be tuned to any cut-off wavelength from the LWIR to the SWIR by tuning the stoichiometric composition. [4,5] As a result of the involved growth mechanisms the cost of these technologies along with their CMOS incompatibility pose significant challenges in the exploitation of IR sensing for this increasing number of applications.…”

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confidence: 99%

MoS₂–HgTe Quantum Dot Hybrid Photodetectors beyond 2 µm

2017

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Mercury telluride (HgTe) colloidal quantum dots (CQDs) have been developed as promising materials for the short and mid-wave infrared photodetection applications because of their low cost, solution processing and size tunable absorption in the short wave-and midinfrared spectrum. However, the low mobility and poor photo-gain have limited the responsivity of HgTe CQDs-based photodetectors to only tens of mA/W. Here, we integrated HgTe CQDs on a TiO2 encapsulated MoS2 transistor channel to form hybrid phototransistors with high responsivity of ~10 6 A/W, the highest reported to date for HgTe QDs. By operating the phototransistor in the depletion regime enabled by the gate modulated current of MoS2, the noise current is significantly suppressed leading to an experimentally measured specific detectivity D* of ~10 12Jones at a wavelength of 2 µm. This work demonstrates for the first time the potential of the hybrid 2D/QD detector technology in reaching out to wavelengths beyond 2 µm with compelling sensitivity.

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MoS₂–HgTe Quantum Dot Hybrid Photodetectors beyond 2 µm

2017

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“…Near infrared (NIR) imaging devices have attracted a great deal of research interest because of their potential applications in range finding, security, semiconductor wafer inspections as well as medical imaging1234. The spectral region between 1 and 1.8 µm is of particular commercial interest due to the low water absorption in this range.…”

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Multi-spectral imaging with infrared sensitive organic light emitting diode

Kim

Lai

Lee

et al. 2014

Sci Rep

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Commercially available near-infrared (IR) imagers are fabricated by integrating expensive epitaxial grown III-V compound semiconductor sensors with Si-based readout integrated circuits (ROIC) by indium bump bonding which significantly increases the fabrication costs of these image sensors. Furthermore, these typical III-V compound semiconductors are not sensitive to the visible region and thus cannot be used for multi-spectral (visible to near-IR) sensing. Here, a low cost infrared (IR) imaging camera is demonstrated with a commercially available digital single-lens reflex (DSLR) camera and an IR sensitive organic light emitting diode (IR-OLED). With an IR-OLED, IR images at a wavelength of 1.2 µm are directly converted to visible images which are then recorded in a Si-CMOS DSLR camera. This multi-spectral imaging system is capable of capturing images at wavelengths in the near-infrared as well as visible regions.

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“…Stability characteristics of the BFBD detector. [ 126 ] c) Photovoltage and photocurrent time stability characterization of a ten-cell device.…”

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confidence: 99%

Toward High‐Performance Carbon Nanotube Photovoltaic Devices

Wang

Peng

2016

Advanced Energy Materials

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PV) devices, direct-bandgap, broad spectral response, large absorption coeffi cient and fast response speed on the order of picosecond, etc. [ 4,6,12,13 ] Tremendous efforts have been made to convert the excellent intrinsic properties of CNTs into high-performance devices. Optoelectronic research has been focused mainly on nanoscale light-emitting diode (LED), photodetector, solar cell and novel physical discoveries such as two-photon absorption, multi-excitons generation, photovoltage multiplication and so on. [14][15][16][17][18][19][20] Here, the fundamental properties of CNT energy band structure and corresponding optical characteristics are reviewed. Then photovoltaic research developments of various kinds of CNT diodes, with particular emphasis on barrier-free-bipolar-diode (BFBD) devices fabricated via a dopingfree method are discussed. For pushing CNT PV devices toward applications, the status of CNT thin-fi lm-based PV devices, including recent breakthroughs made on solution-processed semiconducting CNT separation techniques, and the utilization of these materials for constructing high-performance PV diodes are discussed. The doping-free technique has been combined with virtual contacts to multiply photovoltage and thus to signifi cantly improve the performance and signal to noise ratio of PV devices. It is demonstrated that CNT PV device has a superior broadband response from visible to near infrared, high room temperature detectivity that can be compared with state-of-the-art InGaAs detectors, and extremely good temperature and temporal stability. This article will end with a discussion on the challenges that still lay ahead, and possible solutions. Basic Optical Properties of Carbon NanotubesAs shown in Figure 1 a, a CNT is composed of hexagonal honeycomb sp 2 lattice, and various chirality CNTs can be formed with different orientations relative to the tube axis, giving rise to distinct properties of either semiconducting or metallic. [ 21 ] Semiconducting CNTs have been recommended as the potential channel material for replacing silicon to extend Moore's law. [ 5 ] However, beyond Moore, it is also of great signifi cance to build high-performance optoelectronic devices and circuits. [ 12,22 ] The excellent properties of CNT stem from its basic band structure, which is signifi cant to discuss its unique physical Photovoltaic (PV) infrared (IR)-based devices are important for a variety of industrial and scientifi c applications, such as IR imaging, biological sensing, day-night surveillance and in solar cells. However, most high-end IR PV devices made of conventional semiconductors need to be cooled to achieve high performance, while these materials usually are also not stable under strong illumination. Carbon nanotubes (CNTs) are direct-bandgap materials with a broad spectral response and a large absorption coeffi cient, which is most desired for building high-performance PV devices. Main progresses on CNT PVs in the past 15 years is reviewed, emphasizing recent breakthrough of CNT IR photodetectors b...

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Imaging: The road ahead for car night-vision

Cited by 63 publications

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MoS₂–HgTe Quantum Dot Hybrid Photodetectors beyond 2 µm

MoS₂–HgTe Quantum Dot Hybrid Photodetectors beyond 2 µm

Multi-spectral imaging with infrared sensitive organic light emitting diode

Toward High‐Performance Carbon Nanotube Photovoltaic Devices

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Imaging: The road ahead for car night-vision

Cited by 63 publications

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MoS2–HgTe Quantum Dot Hybrid Photodetectors beyond 2 µm

MoS2–HgTe Quantum Dot Hybrid Photodetectors beyond 2 µm

Multi-spectral imaging with infrared sensitive organic light emitting diode

Toward High‐Performance Carbon Nanotube Photovoltaic Devices

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Product

Resources

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MoS₂–HgTe Quantum Dot Hybrid Photodetectors beyond 2 µm

MoS₂–HgTe Quantum Dot Hybrid Photodetectors beyond 2 µm