Imaging of all Dangling Bonds and their Potential on the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">G</mml:mi><mml:mi mathvariant="normal">e</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant="normal">S</mml:mi><mml:mi mathvariant="normal">i</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mn>105</mml:mn><mml:mo stretchy="false">)</mml:mo></mml:math>Surface by Noncontact Atomic Force Microscopy

Eguchi, Toyoaki; Fujikawa, Y.; Akiyama, Kotone; An, Toshu; Ono, Masahiro; Hashimoto, Tamotsu; Morikawa, Yoshitada; Terakura, Kiyoyuki; Sakurai, Takeshi; Lagally, M. G.; Hasegawa, Yukio

doi:10.1103/physrevlett.93.266102

Cited by 77 publications

(40 citation statements)

References 21 publications

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“…Periodic atomic scale features may thus not necessarily correspond to atomic lattice sites. Atomic force microscopy provides a different contrast and has been demonstrated to be complementary to STM in resolving surface structures [33][34][35]. A high resolution NC-AFM image of a Mn chain at 78 K is shown in Fig.…”

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confidence: 99%

Structure of Self-Assembled Mn Atom Chains on Si(001)

et al. 2015

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Mn has been found to self-assemble into atomic chains running perpendicular to the surface dimer reconstruction on Si(001). They differ from other atomic chains by a striking asymmetric appearance in filled state scanning tunneling microscopy (STM) images. This has prompted complicated structural models involving up to three Mn atoms per chain unit. Combining STM, atomic force microscopy, and density functional theory we find that a simple necklacelike chain of single Mn atoms reproduces all their prominent features, including their asymmetry not captured by current models. The upshot is a remarkably simpler structure for modeling the electronic and magnetic properties of Mn atom chains on Si(001).

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confidence: 99%

Structure of Self-Assembled Mn Atom Chains on Si(001)

et al. 2015

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“…In this scheme, both electrostatic force detection and tip-sample distance regulation are carried out in the first flexural mode (1st-FM-KFM). Both schemes are sensitive enough to achieve atomic resolution in surface potential images [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Highly Sensitive Electrostatic Force Detection Using Small Amplitude Frequency-Modulation Atomic Force Microscopy in the Second Flexural Mode

Nishi

Hosokawa

Kobayashi

et al. 2011

e-J. Surf. Sci. Nanotechnol.

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We propose a novel scheme of highly sensitive electrostatic force detection using a small oscillation amplitude of a cantilever in the second flexural mode of frequency-modulation atomic force microscopy, which is useful for Kelvinprobe force microscopy (KFM) and electrostatic force microscopy (EFM). In this novel scheme, the cantilever is mechanically oscillated at the second flexural resonance frequency with a small oscillation amplitude, while the electrostatic force detection is carried out at the first flexural resonance frequency. Because of the reduced average tip-sample distance and the low spring constant and high quality factor of the first flexural mode, the sensitivity for electrostatic force detection becomes very high. We calculated signal-to-noise ratios (SNRs) for the proposed scheme and conventional schemes, and found that the SNR of the proposed scheme is higher than that of conventional schemes. We also performed KFM/EFM measurements using the proposed and conventional schemes on metal phthalocyanine thin films.

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“…The advent of the atomic force microscope (AFM) extended the range of experiments substantially, since AFM experiments do not rely on the transition of electrons through the tunnelling barrier, and can therefore in principle be performed on all materials [2]. Today, AFM is able to reveal finer details than STM [3][4][5][6]. Theoretically, the advance in quantitative models of AFM and their predictive power made it possible to analyze the differences between simple theoretical models and the obtained experimental results: by gradually obtaining a more realistic view of the experimental situation, the role of different interactions and their effects on SPM images was determined [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Electron scattering in scanning probe microscopy experiments

Zotti

Hofer

Giessibl

2006

Chemical Physics Letters

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It has been shown that electron transitions, as measured in a scanning tunnelling microscope, are related to chemical interactions in a tunnelling barrier. Here, we show that the shape and apparent height of subatomic features in both, measurements of the attractive forces in an atomic force microscope, and measurements of the tunneling current between the Si(1 1 1) surface and an oscillating cantilever, depend directly on the available electron states of the silicon surface and the silicon tip. Simulations and experiments confirm that forces and currents show similar subatomic variations for tip-sample distances approaching the bulk bonding length. Ó 2005 Elsevier B.V. All rights reserved.The intense research into improving the local and energy resolution in scanning probe microscopes (SPM) over the last two decades have made the assignment of atomic features to the position of surface ions attainable in many cases by comparing experimental data to high level numerical simulations. The very high resolution of individual features in the experiments, today below the limit of 1 Å , makes it possible to carry out detailed studies of the electronic structure and their local extension, which a decade ago have been thought impossible. The greater simplicity of physical processes in an scanning tunnelling microscope (STM), where long-range forces and the dynamics of an oscillating cantilever do not enter the picture, seemed to allow accurate comparisons between STM experiments and theory quite early. However, also in this case interactions and atomic displacements in a tunneling junction may decisively alter the image [1]. The advent of the atomic force microscope (AFM) extended the range of experiments substantially, since AFM experiments do not rely on the transition of electrons through the tunnelling barrier, and can therefore in principle be performed on all materials [2]. Today, AFM is able to reveal finer details than STM [3][4][5][6]. Theoretically, the advance in quantitative models of AFM and their predictive power made it possible to analyze the differences between simple theoretical models and the obtained experimental results: by gradually obtaining a more realistic view of the experimental situation, the role of different interactions and their effects on SPM images was determined [7][8][9]. The simple initial models could thus be corrected, e.g., for the effects of atomic relaxations, of ionic charge, or dissipation processes during AFM scans [10].In this Letter, we show that the subatomic features, observed by AFM and STM measurements with oscillating cantilevers on Si(1 1 1) (7 · 7), which have been the subject of intense debate [3,4,11], are due to the scattering of electrons from a very narrow energy range at the surface into double dangling bonds of the silicon tip.The Si(1 1 1) surface was simulated by a four layer silicon film, the bottom layer was passivated with hydrogen. The ionic positions were determined by fully relaxing the surface layers until the Hellman-Feynman forces on individu...

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Imaging of all Dangling Bonds and their Potential on theGe/Si(105)Surface by Noncontact Atomic Force Microscopy

Cited by 77 publications

References 21 publications

Structure of Self-Assembled Mn Atom Chains on Si(001)

Structure of Self-Assembled Mn Atom Chains on Si(001)

Highly Sensitive Electrostatic Force Detection Using Small Amplitude Frequency-Modulation Atomic Force Microscopy in the Second Flexural Mode

Electron scattering in scanning probe microscopy experiments

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