Illumination dependence of I–V and C–V characterization of Au/InSb/InP(100) Schottky structure

The interface states and series resistance effects on the forward and reverse bias I–V, C–V and G/ω-V characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodes

“…As shown in Table 1, the obtained R s values by different methods are almost in agreement with each other and decrease with the increasing illumination intensity. Similar results have been reported in the literature [18][19][20][24][25][26]. The results are consistent with a net reduction in carrier density in the depletion region of device through the introduction of traps and recombination centers associated with illumination effect [27].…”

“…Also, it has been well known that there are currently many reports on experimental studies of metal-semiconductor (MS) and metal-insulator-semiconductor (MIS) Schottky barrier diodes (SBDs) [10][11][12][13][14][15][16][17]. Consequently, there would be an additional photocurrent over the usual dark diode current [18][19][20].…”

Influence of illumination intensity and temperature on the electrical characteristics of an Al/p-GaAs/In structure prepared by thermal evaporation

“…The values of N ss decrease with increasing illumination intensity between the (E v -0.35) and (E v -0.60) eV. It can be deduced that the carriers' excitations had decreased the trap effects at the interface [31]. The obtained results indicate that the illumination dependence of N ss values of Al/p-GaAs structure are not different from that for N ss values of Al-TiW-Pd 2 Si/n-Si SBD [18] and are different from that for p-ZnTe/n-CdMnTe/GaAs magnetic diode [19].…”

“…(4) are given in Table 1. It is possible to see similar evaluations in the literature [17,18,[29][30][31]. The values of R s were determined for a wide illumination range of 20-120 mW/cm 2 .…”

Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

“…With the advancement in the semiconductor technology, Indium phosphide (InP) and its alloys have become more and more attractive semiconductor materials for the applications in high speed optoelectronic devices and high power microwave devices because of its direct bandgap and high mobility [1][2][3]. For instance, InP based Schottky devices are one of the most requisite elements for microwave circuits.…”