IIIB-4 fabrication of Si-MOSFET using NTD silicon as the semi-insulating substrate

Ho, V. Q.; Sugano, T.

doi:10.1109/t-ed.1981.20545

Cited by 6 publications

(5 citation statements)

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“…The good electrical properties demonstrated by thin plasma oxides have already allowed application of the technique to the production of MOS gates for VLSI circuits [38,41]. Small-geometry MOSFETS have been fabricated with n-channel low-field mobilities of 68Ocm' V-' s-l and threshold voltages of 0.4 V. These values are comparable with conventional thermal oxide MOSFETS and typical output characteristics for such transistors are shown in figure 7.…”

Section: Applicationsmentioning

confidence: 90%

A review of the plasma oxidation of silicon and its applications

Taylor

Zhang

Eccleston

1993

Semicond. Sci. Technol.

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Abs!rie!, !n recent years !here has beer! a" increasing tr9.d !awards 'dry' 2nd'cold' processing. The oxidation of silicon in an oxygen plasma allows the controlled growth of thin, high-quality films of silicon dioxide at temperatures down to room temperature in a clean vacuum environment. In this review the various experimental systems which have been reported in the literature over the last 28 years are compared and contrasted. Physical properties of the oxides are found to be very similar to thermally grown films. The reported kinetics of plasma oxide growth are reviewed, together with the electrical and electronic properties of the grown oxide layers. Inductively coupled plasma oxidation is shown to have advantages over the other techniques, and some recent results obtained using this method are highlighted. The current and possible future applications of plasma oxidation for novel silicon and silicon-based device processing are discussed.

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Section: Applicationsmentioning

confidence: 90%

A review of the plasma oxidation of silicon and its applications

Taylor

Zhang

Eccleston

1993

Semicond. Sci. Technol.

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“…In the early 80's low-temperature oxidation using plasma techniques was already intensively studied to reduce the thermal impact for small device structures and field effect transistor devices (1,2). Ray and Reismann replaced the standard thermal oxidation process by an RF generated oxygen plasma in the pressure range below 10 mTorr and showed field effect transistor devices with comparable characteristics to conventional thermally oxidized structures (1).…”

Section: Introductionmentioning

confidence: 99%

(Invited) Scaling Requires Continuous Innovation in Thermal Processing: Low-Temperature Plasma Oxidation

et al. 2012

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The required temperature in semiconductor process technology is going in two extreme directions. Either very high temperatures (up to 1300°C) with very short durations on the order of milliseconds are required for highest dopant activation, or extremely low temperatures are needed for forming high-quality dielectrics with minimum dopant deactivation and redistribution. This contribution describes a new microwave plasma oxidation apparatus with unique features addressing the before-mentioned low-temperature process requirements. With this new technique the oxide growth rate was studied as a function of time, gas ambient, pressure, applied microwave power and silicon substrate parameters to determine crystallographic oxidation rate anisotropy and dopant concentration independent oxidation at temperatures well below 500°C. The "More-Moore" approach of geometrical scaling in 2D will soon come to a physical end and therefore new requirements related to the thermal budget occur. Additionally, the transition from 2D- to 3D-devices requires extremely conformal oxide growth. Both the low temperature and the conformal oxide growth will be demonstrated on test structures.

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“…408 406 404 402 400 398 396 394 392 390 4,0x10 4 6,0x10 4 8,0x10 4 1,0x10 5 1,2x10 5 1,4x10 5 1,6x10 5 1,8x10 5 In Figure 8e the O 1s signal shows the binding configuration of oxygen in oxide and nitride layers. Only one distinct signal is present that is decreasing with increasing N content.…”

Section: Plasma Oxidation Of Silicon and Nitridation Of Plasma-grown ...mentioning

confidence: 99%

“…The major reported problems were the non-acceptable film uniformity for manufacturing over a wafer and the rather poor electrical quality of the film mostly due to charges within the film and surface states at the Si-SiO 2 interface [3]. In the 1980's Ho and Sugano [4,5] intensively studied the plasma oxidation technique for small device structures and field effect transistor devices and due to the high implied electric field during the oxidation bird's beak formation was suppressed. Furthermore the low temperature oxidation showed no stacking faults in comparison to a thermally grown 1 µm thick oxide layer [6].…”

Section: Introductionmentioning

confidence: 99%

(Invited) Low-Temperature Microwave-Based Plasma Oxidation of Ge and Oxidation of Silicon Followed by Plasma Nitridation

et al. 2016

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In the semiconductor industry Germanium is expected as the promising channel material for future high-mobility CMOS transistors because of its highest hole mobility among common elemental and compound semiconductors, and an electron mobility that is two times larger than that of Si. This article shows that oxides can be grown and/or in a subsequent process step nitridized for planar Ge and Si devices at very low temperatures (T < 460 °C). The stable oxide growth on Germanium through plasma processing is studied as a function of relevant processing parameters like time, gaseous ambient etc. For Silicon the bonding structure of pure and nitridized low-temperature grown SiO2 is analyzed, followed by an electrical characterization of 0.8 to 1.2 nm interfacial layers on Si.

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IIIB-4 fabrication of Si-MOSFET using NTD silicon as the semi-insulating substrate

Cited by 6 publications

References 0 publications

A review of the plasma oxidation of silicon and its applications

A review of the plasma oxidation of silicon and its applications

(Invited) Scaling Requires Continuous Innovation in Thermal Processing: Low-Temperature Plasma Oxidation

(Invited) Low-Temperature Microwave-Based Plasma Oxidation of Ge and Oxidation of Silicon Followed by Plasma Nitridation

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