III-V Ternary Semiconducting Compounds-Data Tables

Neuberger, M.

doi:10.1007/978-1-4684-6165-7

Cited by 12 publications

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“…The experimental bandgap, E 0 , and intrinsic carrier concentration n i , have been measured as a function of temperature and the following expressions [4] have been found to agree well with the experimental data: Other important parameters such as lattice constant, electron and hole masses, refractive index and thermal expansion coefficient are summarized in Table 3.1 [5].…”

Section: Introductionmentioning

confidence: 81%

Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices

Razeghi

2003

Eur. Phys. J. AP

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Abstract. The properties of Sb-based III-V semiconductor compounds for optoelectronic applications in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) range were reviewed. The growths of the Sb-based binary, ternary and quaternary were studied by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). The structural, optical and electrical characterizations were carried out. Focal plane array, photoconductors and photodiodes were fabricated for the MWIR and LWIR range. Doublehetero structure (DH), multi-quantum well (MQW) and strained superlattice (SSL) lasers in the 3-5 µm range were fabricated. InAs-GaSb type-II superlattices were designed, grown and fabricated into photodetectors for the MWIR and LWIR range.

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Section: Introductionmentioning

confidence: 81%

Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices

Razeghi

2003

Eur. Phys. J. AP

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Some new experimental results on the proton induced Kossel ‐ effect

Geist

Flagmeyer

1975

Cryst Res and Technol

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Configuration entropy of ternary alloy superlattice

Šrobár

1981

Cryst Res and Technol

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Difference in mixture-related entropy between superlattice and the corresponding homogeneous crystal in which all composition gradients have been annihilated by equilibrating processes (the configuration entropy of superlattice, ABcod) is analytically formulated aa a function of composition variables and geometry parameters. Numerical evaluations are performed for the important case of Al,Gai-&+based superlattice. Qualitative trends confirm in general the intuitive expectations (-dBcod grows with increasing composition difference between the layers) ; the dependencies on geometry parameters exhibit a peculiar behaviour. The results are applicable to superlattices with periode lengths sufficiently in excess of the monoatomic layer thickness.Une formulation analytique de difference entre l'entropie (li6e B la notion de l'entropie du melange) d'un superreseau et celle d'un correspondant cristal homogbne ou les gradients de composition ont Bt6 annihiles par les processus de 1'6quilibration est presentee. Cette difference, nommBe l'entropie de configuration du superreseau, A s c o d , est decrite comme une fonction des variables relatives B composition et des parambtres de g6omBtrie. Les Bvaluations numeriques ont Bt6 effectuees pour le cas important d'un superreseau h base des composees ternaires du systhme A1,Gal -As. Les tendences qualitatives sont gendralement en accord avec les anticipations intuitives ( -ABcod croit avec la difference en composition des couches) ; les dependences de parambtre geometrique suggbrent un comportement singulier. Les resultats sont applicables pour les superreseam avec periodes suffisamment superieures B l'epaisseur des couches monoatomiques.

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III-V Ternary Semiconducting Compounds-Data Tables

Cited by 12 publications

References 0 publications

Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices

Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices

Some new experimental results on the proton induced Kossel ‐ effect

Configuration entropy of ternary alloy superlattice

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